IRFS11N50APBF Vishay, IRFS11N50APBF Datasheet - Page 5

MOSFET N-CH 500V 11A D2PAK

IRFS11N50APBF

Manufacturer Part Number
IRFS11N50APBF
Description
MOSFET N-CH 500V 11A D2PAK
Manufacturer
Vishay
Datasheets

Specifications of IRFS11N50APBF

Transistor Polarity
N-Channel
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
520 mOhm @ 6.6A, 10V
Drain To Source Voltage (vdss)
500V
Current - Continuous Drain (id) @ 25° C
11A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
52nC @ 10V
Input Capacitance (ciss) @ Vds
1423pF @ 25V
Power - Max
170W
Mounting Type
Surface Mount
Package / Case
D²Pak, TO-263 (2 leads + tab)
Minimum Operating Temperature
- 55 C
Configuration
Single
Resistance Drain-source Rds (on)
0.52 Ohm @ 10 V
Drain-source Breakdown Voltage
500 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
11 A
Power Dissipation
170000 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Continuous Drain Current Id
11A
Drain Source Voltage Vds
500V
On Resistance Rds(on)
520mohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
4V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
*IRFS11N50APBF

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IRFS11N50APBF
Quantity:
1 000
Company:
Part Number:
IRFS11N50APBF
Quantity:
70 000
Document Number: 91286
S10-2326-Rev. B, 18-Oct-10
Fig. 9 - Maximum Drain Current vs. Case Temperature
Fig. 12a - Unclamped Inductive Test Circuit
R
g
20 V
V
DS
t
p
I
AS
D.U.T.
0.01 Ω
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
L
15 V
Driver
+
- V
A
DD
IRFS11N50A, SiHFS11N50A
Fig. 12b - Unclamped Inductive Waveforms
I
90 %
10 %
AS
Fig. 10a - Switching Time Test Circuit
Fig. 10b - Switching Time Waveforms
V
V
DS
GS
R
Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %
g
10 V
V
GS
t
d(on)
V
DS
t
r
t
p
D.U.T.
R
Vishay Siliconix
D
t
d(off)
V
DS
t
f
+
-
www.vishay.com
V
DD
5

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