IRF740ASPBF Vishay, IRF740ASPBF Datasheet - Page 5

• Manufacturer Part Number: IRF740ASPBF
• Description: MOSFET N-CH 400V 10A D2PAK
• Manufacturer: Vishay

Specifications of IRF740ASPBF

• Transistor Polarity: N-Channel
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 550 mOhm @ 6A, 10V
• Drain To Source Voltage (vdss): 400V
• Current - Continuous Drain (id) @ 25° C: 10A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 36nC @ 10V
• Input Capacitance (ciss) @ Vds: 1030pF @ 25V
• Power - Max: 3.1W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Resistance Drain-source Rds (on): 0.55 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 4.9 S
• Drain-source Breakdown Voltage: 400 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 10 A
• Power Dissipation: 3100 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Continuous Drain Current Id: 10A
• Drain Source Voltage Vds: 400V
• On Resistance Rds(on): 550mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 4V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: *IRF740ASPBF

Document Number: 91052
S-83029-Rev. A, 19-Jan-09
91052_09
Fig. 9 - Maximum Drain Current vs. Case Temperature
91052_11
Fig. 12a - Unclamped Inductive Test Circuit
10.0
8.0
6.0
4.0
2.0
0.0
R
25
20 V
G
V
10
10
0.1
DS
10
-2
1
-3
10
t
p
-5
0.05
0.02
0.01
D = 0.50
0.20
0.10
50
T
I
C
AS
D.U.T
, Case Temperature (°C)
0.01 Ω
L
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
75
10
-4
Single Pulse
(Thermal Response)
100
15 V
IRF740AS, IRF740AL, SiHF740AS, SiHF740AL
Driver
125
+
- V
10
DD
A
t
-3
1
, Rectangular Pulse Duration (s)
150
10
-2
Fig. 12b - Unclamped Inductive Waveforms
I
0.1
90 %
10 %
AS
Fig. 10a - Switching Time Test Circuit
Fig. 10b - Switching Time Waveforms
V
V
DS
GS
R
Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %
G
10 V
V
GS
t
d(on)
Notes:
1. Duty Factor, D = t
2. Peak T
V
DS
t
r
1
j
t
= P
p
P
DM
DM
D.U.T.
x Z
t
Vishay Siliconix
R
1
1
thJC
D
/t
t
2
d(off)
V
t
2
+ T
DS
C
10
t
f
+
-
www.vishay.com
V
DD
5