IRF740ASPBF Vishay, IRF740ASPBF Datasheet - Page 3

• Manufacturer Part Number: IRF740ASPBF
• Description: MOSFET N-CH 400V 10A D2PAK
• Manufacturer: Vishay

Specifications of IRF740ASPBF

• Transistor Polarity: N-Channel
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 550 mOhm @ 6A, 10V
• Drain To Source Voltage (vdss): 400V
• Current - Continuous Drain (id) @ 25° C: 10A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 36nC @ 10V
• Input Capacitance (ciss) @ Vds: 1030pF @ 25V
• Power - Max: 3.1W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Resistance Drain-source Rds (on): 0.55 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 4.9 S
• Drain-source Breakdown Voltage: 400 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 10 A
• Power Dissipation: 3100 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Continuous Drain Current Id: 10A
• Drain Source Voltage Vds: 400V
• On Resistance Rds(on): 550mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 4V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: *IRF740ASPBF

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 91052
S-83029-Rev. A, 19-Jan-09
91052_01
91052_02
10
10
0.1
10
10
0.1
10
-2
1
2
1
2
0.1
0.1
Fig. 2 - Typical Output Characteristics
Fig. 1 - Typical Output Characteristics
Top
Bottom
Top
Bottom
V
V
15 V
10 V
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
4.5 V
DS
V
DS ,
GS
15 V
10 V
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
4.5 V
, Drain-to-Source Voltage (V)
V
GS
Drain-to-Source Voltage (V)
1
1
20 µs Pulse Width
T
20 µs Pulse Width
T
10
10
J
IRF740AS, IRF740AL, SiHF740AS, SiHF740AL
J
=
=
25 °C
150 °C
4.5 V
4.5 V
10
10
2
2
91052_04
91052_03
3.0
2.5
2.0
1.5
1.0
0.5
0.0
10
Fig. 4 - Normalized On-Resistance vs. Temperature
0.1
10
1
2
- 60 - 40 - 20 0
4.0
T
Fig. 3 - Typical Transfer Characteristics
I
V
D
J
GS
= 10 A
= 150
= 10 V
V
5.0
T
GS ,
J ,
°
C
T
Junction Temperature (°C)
Gate-to-Source Voltage (V)
J
= 25
6.0
20 40 60 80 100 120 140 160
°
C
7.0
Vishay Siliconix
20 µs Pulse Width
V
8.0
DS
=
50 V
9.0
www.vishay.com
10.0
3