IRF740ASPBF Vishay, IRF740ASPBF Datasheet - Page 4

• Manufacturer Part Number: IRF740ASPBF
• Description: MOSFET N-CH 400V 10A D2PAK
• Manufacturer: Vishay

Specifications of IRF740ASPBF

• Transistor Polarity: N-Channel
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 550 mOhm @ 6A, 10V
• Drain To Source Voltage (vdss): 400V
• Current - Continuous Drain (id) @ 25° C: 10A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 36nC @ 10V
• Input Capacitance (ciss) @ Vds: 1030pF @ 25V
• Power - Max: 3.1W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Resistance Drain-source Rds (on): 0.55 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 4.9 S
• Drain-source Breakdown Voltage: 400 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 10 A
• Power Dissipation: 3100 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Continuous Drain Current Id: 10A
• Drain Source Voltage Vds: 400V
• On Resistance Rds(on): 550mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 4V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: *IRF740ASPBF

IRF740AS, IRF740AL, SiHF740AS, SiHF740AL
Vishay Siliconix
www.vishay.com
4
91052_06
91052_05
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
10
10
10
10
16
20
12
10
8
4
0
1
5
4
3
2
1
0
I
D
= 10 A
V
DS ,
Q
10
G
V
Drain-to-Source Voltage (V)
, Total Gate Charge (nC)
DS
10
= 80 V
V
DS
V
C
C
C
= 200 V
GS
iss
rss
oss
20
V
= C
= 0 V, f = 1 MHz
= C
= C
DS
gs
gd
= 320 V
ds
C
C
C
+ C
+ C
oss
iss
rss
10
gd
2
gd
For test circuit
see figure 13
, C
30
ds
Shorted
10
40
3
91052_08
91052_07
Fig. 7 - Typical Source-Drain Diode Forward Voltage
10
10
0.1
10
10
1
2
1
2
Fig. 8 - Maximum Safe Operating Area
10
0.2
T
J
= 150
V
V
0.4
DS
SD
Operation in this area limited
, Drain-to-Source Voltage (V)
, Source-to-Drain Voltage (V)
°
C
0.6
T
T
Single Pulse
by R
C
J
= 150 °C
= 25 °C
T
10
0.8
J
DS(on)
= 25
2
S-83029-Rev. A, 19-Jan-09
Document Number: 91052
°
C
1.0
V
1.2
10
100
1
10
GS
ms
µs
ms
= 0 V
µs
10
1.4
3