SUD50P06-15-GE3 Vishay, SUD50P06-15-GE3 Datasheet - Page 4
![MOSFET P-CH 60V 50A TO-252](/photos/5/46/54657/pkg_5347_sml.jpg)
SUD50P06-15-GE3
Manufacturer Part Number
SUD50P06-15-GE3
Description
MOSFET P-CH 60V 50A TO-252
Manufacturer
Vishay
Datasheet
1.SUD50P06-15-GE3.pdf
(5 pages)
Specifications of SUD50P06-15-GE3
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
15 mOhm @ 17A, 10V
Drain To Source Voltage (vdss)
60V
Current - Continuous Drain (id) @ 25° C
50A
Vgs(th) (max) @ Id
3V @ 250µA
Gate Charge (qg) @ Vgs
165nC @ 10V
Input Capacitance (ciss) @ Vds
4950pF @ 25V
Power - Max
113W
Mounting Type
Surface Mount
Package / Case
DPak, TO-252 (2 leads+tab), SC-63
Transistor Polarity
P Channel
Continuous Drain Current Id
-50A
Drain Source Voltage Vds
-60V
On Resistance Rds(on)
20mohm
Rds(on) Test Voltage Vgs
20V
Threshold Voltage Vgs Typ
-3V
Configuration
Single
Resistance Drain-source Rds (on)
0.015 Ohms
Drain-source Breakdown Voltage
- 60 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
50 A
Power Dissipation
2.5 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
SUD50P06-15-GE3TR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
SUD50P06-15-GE3
Manufacturer:
VISHAY
Quantity:
9 934
Part Number:
SUD50P06-15-GE3
Manufacturer:
VISHAY/威世
Quantity:
20 000
SUD50P06-15
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
THERMAL RATINGS
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see
www.vishay.com
4
0.01
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
60
50
40
30
20
10
0.1
- 50
0
2
1
10
0
http://www.vishay.com/ppg?68940.
-4
On-Resistance vs. Junction Temperature
Duty Cycle = 0.5
0.2
0.1
V
I
D
- 25
GS
Drain Current vs. Case Temperature
= 17 A
Single Pulse
25
= 10 V
0.02
T
0
T
J
C
- Junction Temperature (°C)
50
- Case Temperature (°C)
25
0.05
50
75
75
Normalized Thermal Transient Impedance, Junction-to-Case
10
100
-3
100
125
125
150
150
Square Wave Pulse Duration (s)
10
100
100
-2
10
10
1
1
0.1
0.0
Limited by
* V
GS
Source-Drain Diode Forward Voltage
T
Single Pulse
> minimum V
C
0.3
V
T
R
= 25 °C
DS
J
V
DS(on) *
= 150 °C
SD
- Drain-to-Source Voltage (V)
Safe Operating Area
- Source-to-Drain Voltage (V)
1
0.6
GS
at which R
10
-1
0.9
S-82285-Rev. A, 22-Sep-08
DS(on)
10
T
Document Number: 68940
J
P(t) = 0.1
= 25 °C
P(t) = 1
is specified
1.2
P(t) = 0.0001
P(t) = 0.001
P(t) = 0.01
BVDSS Limited
100
1.5
1