SUD50P06-15-GE3 Vishay, SUD50P06-15-GE3 Datasheet - Page 2
![MOSFET P-CH 60V 50A TO-252](/photos/5/46/54657/pkg_5347_sml.jpg)
SUD50P06-15-GE3
Manufacturer Part Number
SUD50P06-15-GE3
Description
MOSFET P-CH 60V 50A TO-252
Manufacturer
Vishay
Datasheet
1.SUD50P06-15-GE3.pdf
(5 pages)
Specifications of SUD50P06-15-GE3
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
15 mOhm @ 17A, 10V
Drain To Source Voltage (vdss)
60V
Current - Continuous Drain (id) @ 25° C
50A
Vgs(th) (max) @ Id
3V @ 250µA
Gate Charge (qg) @ Vgs
165nC @ 10V
Input Capacitance (ciss) @ Vds
4950pF @ 25V
Power - Max
113W
Mounting Type
Surface Mount
Package / Case
DPak, TO-252 (2 leads+tab), SC-63
Transistor Polarity
P Channel
Continuous Drain Current Id
-50A
Drain Source Voltage Vds
-60V
On Resistance Rds(on)
20mohm
Rds(on) Test Voltage Vgs
20V
Threshold Voltage Vgs Typ
-3V
Configuration
Single
Resistance Drain-source Rds (on)
0.015 Ohms
Drain-source Breakdown Voltage
- 60 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
50 A
Power Dissipation
2.5 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
SUD50P06-15-GE3TR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
SUD50P06-15-GE3
Manufacturer:
VISHAY
Quantity:
9 934
Part Number:
SUD50P06-15-GE3
Manufacturer:
VISHAY/威世
Quantity:
20 000
SUD50P06-15
Vishay Siliconix
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
2
SPECIFICATIONS T
Parameter
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Diode Ratings and Characteristics T
Continuous Current
Pulsed Current
Forward Voltage
Reverse Recovery Time
c
b
c
a
c
c
c
c
c
a
a
J
= 25 °C, unless otherwise noted
a
V
Symbol
R
V
(BR)DSS
I
t
t
I
C
I
DS(on)
C
V
GS(th)
D(on)
C
Q
Q
d(on)
d(off)
GSS
DSS
I
Q
g
SM
I
t
oss
t
t
rss
SD
iss
S
rr
fs
gs
gd
r
f
g
C
V
V
V
= 25 °C
V
V
I
D
DS
V
GS
GS
DS
DS
GS
≅ - 50 A, V
= - 30 V, V
= - 10 V, I
= - 10 V, I
I
= - 60 V, V
= - 60 V, V
F
V
V
V
= 0 V, V
V
V
V
V
V
V
= - 50 A, dI/dt = 100 A/µs
DS
DS
GS
DD
b
I
GS
DS
GS
DS
DS
F
Test Conditions
= - 50 A, V
= V
= - 5 V, V
= - 4.5 V, I
= 0 V, V
= - 30 V, R
= 0 V, I
= - 10 V, I
= - 15 V, I
= - 60 V, V
GEN
GS
DS
D
D
GS
GS
GS
= - 50 A, T
= - 50 A, T
, I
= - 25 V, f = 1 MHz
= - 10 V, I
D
= - 10 V, R
D
= 0 V, T
= 0 V, T
GS
GS
= - 250 µA
= - 250 µA
D
D
GS
D
GS
L
= ± 20 V
= - 17 A
= - 17 A
= - 10 V
= - 14 A
= 0.6 Ω
= 0 V
= 0 V
J
J
J
J
D
= 125 °C
= 150 °C
= 125 °C
= 150 °C
G
= - 50 A
= 6 Ω
Min.
- 60
- 50
- 1
0.012
4950
Typ.
- 1.0
480
405
110
175
175
61
19
28
15
70
45
S-82285-Rev. A, 22-Sep-08
Document Number: 68940
± 100
0.015
0.025
0.028
0.020
Max.
- 100
- 1.6
- 50
- 50
- 80
165
105
260
260
- 3
- 1
23
70
Unit
nA
µA
pF
nC
ns
ns
Ω
V
A
S
A
V