SUD50P06-15-GE3 Vishay, SUD50P06-15-GE3 Datasheet - Page 3
![MOSFET P-CH 60V 50A TO-252](/photos/5/46/54657/pkg_5347_sml.jpg)
SUD50P06-15-GE3
Manufacturer Part Number
SUD50P06-15-GE3
Description
MOSFET P-CH 60V 50A TO-252
Manufacturer
Vishay
Datasheet
1.SUD50P06-15-GE3.pdf
(5 pages)
Specifications of SUD50P06-15-GE3
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
15 mOhm @ 17A, 10V
Drain To Source Voltage (vdss)
60V
Current - Continuous Drain (id) @ 25° C
50A
Vgs(th) (max) @ Id
3V @ 250µA
Gate Charge (qg) @ Vgs
165nC @ 10V
Input Capacitance (ciss) @ Vds
4950pF @ 25V
Power - Max
113W
Mounting Type
Surface Mount
Package / Case
DPak, TO-252 (2 leads+tab), SC-63
Transistor Polarity
P Channel
Continuous Drain Current Id
-50A
Drain Source Voltage Vds
-60V
On Resistance Rds(on)
20mohm
Rds(on) Test Voltage Vgs
20V
Threshold Voltage Vgs Typ
-3V
Configuration
Single
Resistance Drain-source Rds (on)
0.015 Ohms
Drain-source Breakdown Voltage
- 60 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
50 A
Power Dissipation
2.5 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
SUD50P06-15-GE3TR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
SUD50P06-15-GE3
Manufacturer:
VISHAY
Quantity:
9 934
Part Number:
SUD50P06-15-GE3
Manufacturer:
VISHAY/威世
Quantity:
20 000
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 68940
S-82285-Rev. A, 22-Sep-08
8000
7000
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100
80
60
40
20
80
70
60
50
40
30
20
10
0
0
0
0
0
0
C
rss
10
10
1
V
V
V
C
T
GS
DS
DS
Output Characteristics
C
oss
= - 55 °C
Transconductance
- Gate-to-Source Voltage (V)
- Drain-to-Source Voltage (V)
- Drain-to-Source Voltage (V)
20
20
Capacitance
C
2
V
iss
GS
30
30
= 10 thru 4 V
3
40
40
4
50
50
125 °C
25 °C
3 V
60
60
5
0.025
0.020
0.015
0.010
0.005
0.000
10
80
70
60
50
40
30
20
10
8
6
4
2
0
0
0.0
0
0
V
I
D
DS
0.5
10
= 50 A
20
On-Resistance vs. Drain Current
= 30 V
V
1.0
20
Transfer Characteristics
GS
Q
g
- Gate-to-Source Voltage (V)
V
I
40
- Total Gate Charge (nC)
D
GS
1.5
30
- Drain Current (A)
Gate Charge
= 4.5 V
T
25 ° C
C
SUD50P06-15
2.0
40
= 125 ° C
60
Vishay Siliconix
2.5
V
50
GS
80
= 10 V
www.vishay.com
3.0
60
- 55 °C
100
3.5
70
120
4.0
80
3