IRF830SPBF Vishay, IRF830SPBF Datasheet - Page 3

• Manufacturer Part Number: IRF830SPBF
• Description: MOSFET N-CH 500V 4.5A D2PAK
• Manufacturer: Vishay

Specifications of IRF830SPBF

• Transistor Polarity: N-Channel
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 1.5 Ohm @ 2.7A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 4.5A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 38nC @ 10V
• Input Capacitance (ciss) @ Vds: 610pF @ 25V
• Power - Max: 74W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Resistance Drain-source Rds (on): 1.5 Ohm @ 10 V
• Drain-source Breakdown Voltage: 500 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 4.5 A
• Power Dissipation: 3100 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Continuous Drain Current Id: 4.5A
• Drain Source Voltage Vds: 500V
• On Resistance Rds(on): 1.5ohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 4V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: *IRF830SPBF

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 91064
S-83030-Rev. A, 19-Jan-09
91064_01
91064_02
Fig. 2 - Typical Output Characteristics, T
Fig. 1 - Typical Output Characteristics, T
10
10
10
10
10
10
-1
-1
1
0
1
0
Top
Bottom
Top
Bottom
V
V
DS
DS ,
15 V
10 V
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
4.5 V
10
V
15 V
10 V
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
4.5 V
, Drain-to-Source Voltage (V)
V
GS
0
GS
Drain-to-Source Voltage (V)
10
0
20 µs Pulse Width
T
20 µs Pulse Width
T
C
10
C
=
10
=
1
25 °C
150 °C
1
C
C
4.5 V
= 150 °C
4.5 V
= 25 °C
91064_03
91064_04
Fig. 4 - Normalized On-Resistance vs. Temperature
10
10
10
3.0
2.5
2.0
1.5
1.0
0.5
0.0
-1
1
0
- 60 - 40 - 20 0
4
Fig. 3 - Typical Transfer Characteristics
I
V
D
GS
= 3.1 A
150
= 10 V
V
5
GS ,
T
°
C
J ,
25
Junction Temperature (°C)
Gate-to-Source Voltage (V)
IRF830S, SiHF830S
°
C
6
20 40 60 80 100 120 140 160
7
Vishay Siliconix
20 µs Pulse Width
V
DS
8
=
50 V
9
www.vishay.com
10
3