IRF830SPBF Vishay, IRF830SPBF Datasheet
IRF830SPBF
Specifications of IRF830SPBF
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IRF830SPBF Summary of contents
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... The 2 D PAK (TO-263) is suitable for high current applications S because of its low internal connection resistance and can N-Channel MOSFET dissipate typical surface mount application PAK (TO-263) IRF830SPbF SiHF830S-E3 IRF830S SiHF830S = 25 °C, unless otherwise noted ° ...
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... IRF830S, SiHF830S Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER Maximum Junction-to-Ambient Maximum Junction-to-Ambient a (PCB Mount) Maximum Junction-to-Case (Drain) Note a. When mounted on 1" square PCB (FR-4 or G-10 material). SPECIFICATIONS °C, unless otherwise noted J PARAMETER Static Drain-Source Breakdown Voltage V Temperature Coefficient DS Gate-Source Threshold Voltage ...
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... Fig Typical Output Characteristics, T Document Number: 91064 S-83030-Rev. A, 19-Jan-09 4 µs Pulse Width ° 91064_03 = 25 ° µs Pulse Width T = 150 ° 91064_04 = 150 °C Fig Normalized On-Resistance vs. Temperature C IRF830S, SiHF830S Vishay Siliconix 1 10 ° 150 C ° µs Pulse Width Gate-to-Source Voltage ( Fig ...
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... IRF830S, SiHF830S Vishay Siliconix 1500 MHz iss 1250 rss oss 1000 750 500 250 Drain-to-Source Voltage ( 91064_05 Fig Typical Capacitance vs. Drain-to-Source Voltage 3 250 100 Total Gate Charge (nC) 91064_06 G Fig Typical Gate Charge vs. Gate-to-Source Voltage www.vishay.com Shorted iss C oss C rss 1 10 91064_07 Fig ...
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... Fig Maximum Effective Transient Thermal Impedance, Junction-to-Case Document Number: 91064 S-83030-Rev. A, 19-Jan-09 125 150 Single Pulse (Thermal Response Rectangular Pulse Duration (s) 1 IRF830S, SiHF830S Vishay Siliconix D.U. Pulse width ≤ 1 µs Duty factor ≤ 0.1 % Fig. 10a - Switching Time Test Circuit ...
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... IRF830S, SiHF830S Vishay Siliconix Vary t to obtain p required I AS D.U. 0.01 Ω Fig. 12a - Unclamped Inductive Test Circuit 91064_12c Fig. 12c - Maximum Avalanche Energy vs. Drain Current Charge Fig. 13a - Basic Gate Charge Waveform www.vishay.com Fig. 12b - Unclamped Inductive Waveforms 600 Top ...
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... Re-applied voltage * Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?91064. ...
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... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...