SI4427BDY-T1-E3 Vishay, SI4427BDY-T1-E3 Datasheet - Page 3

• Manufacturer Part Number: SI4427BDY-T1-E3
• Description: MOSFET P-CH 30V 9.7A 8-SOIC
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SI4427BDY-T1-E3

• Transistor Polarity: P-Channel
• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 10.5 mOhm @ 12.6A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 9.7A
• Vgs(th) (max) @ Id: 1.4V @ 250µA
• Gate Charge (qg) @ Vgs: 70nC @ 4.5V
• Power - Max: 1.5W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Minimum Operating Temperature: - 55 C
• Configuration: Single Quad Drain Triple Source
• Resistance Drain-source Rds (on): 0.0105 Ohm @ 10 V
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 12 V
• Continuous Drain Current: 9.7 A
• Power Dissipation: 1500 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Continuous Drain Current Id: -12.6A
• Drain Source Voltage Vds: -30V
• On Resistance Rds(on): 19.5mohm
• Rds(on) Test Voltage Vgs: 12V
• Threshold Voltage Vgs Typ: -1.4V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SI4427BDY-T1-E3TR

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 72295
S09-0764-Rev. D, 04-May-09
0.030
0.025
0.020
0.015
0.010
0.005
0.000
50
10
10
1
8
6
4
2
0
0.0
0
0
V
I
D
V
DS
Source-Drain Diode Forward Voltage
= 12.6 A
GS
0.2
On-Resistance vs. Drain Current
= 15 V
10
20
= 2.5 V
T
V
Q
J
SD
g
= 150 °C
I
- Total Gate Charge (nC)
D
0.4
- Source-to-Drain Voltage (V)
- Drain Current (A)
Gate Charge
20
40
0.6
30
60
0.8
V
V
GS
GS
T
= 4.5 V
= 10 V
J
40
80
= 25 °C
1.0
100
1.2
50
0.030
0.025
0.020
0.015
0.010
0.005
0.000
6000
5000
4000
3000
2000
1000
1.6
1.4
1.2
1.0
0.8
0.6
0
- 50
0
0
On-Resistance vs. Gate-to-Source Voltage
On-Resistance vs. Junction Temperature
C
V
I
- 25
rss
D
GS
= 12.6 A
= 10 V
2
6
V
DS
V
T
0
GS
J
C
- Drain-to-Source Voltage (V)
- Junction Temperature (°C)
oss
- Gate-to-Source Voltage (V)
Capacitance
25
12
4
I
D
= 12.6 A
50
Vishay Siliconix
C
iss
Si4427BDY
18
6
75
www.vishay.com
100
24
8
125
10
150
30
3