SI4427BDY-T1-E3 Vishay, SI4427BDY-T1-E3 Datasheet - Page 2
![MOSFET P-CH 30V 9.7A 8-SOIC](/photos/5/42/54248/pkg_5498_sml.jpg)
SI4427BDY-T1-E3
Manufacturer Part Number
SI4427BDY-T1-E3
Description
MOSFET P-CH 30V 9.7A 8-SOIC
Manufacturer
Vishay
Series
TrenchFET®r
Datasheet
1.SI4427BDY-T1-E3.pdf
(6 pages)
Specifications of SI4427BDY-T1-E3
Transistor Polarity
P-Channel
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
10.5 mOhm @ 12.6A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
9.7A
Vgs(th) (max) @ Id
1.4V @ 250µA
Gate Charge (qg) @ Vgs
70nC @ 4.5V
Power - Max
1.5W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Minimum Operating Temperature
- 55 C
Configuration
Single Quad Drain Triple Source
Resistance Drain-source Rds (on)
0.0105 Ohm @ 10 V
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
+/- 12 V
Continuous Drain Current
9.7 A
Power Dissipation
1500 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Continuous Drain Current Id
-12.6A
Drain Source Voltage Vds
-30V
On Resistance Rds(on)
19.5mohm
Rds(on) Test Voltage Vgs
12V
Threshold Voltage Vgs Typ
-1.4V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
SI4427BDY-T1-E3TR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
SI4427BDY-T1-E3
Manufacturer:
Vishay/Siliconix
Quantity:
40 457
Company:
Part Number:
SI4427BDY-T1-E3
Manufacturer:
Maxim
Quantity:
490
Company:
Part Number:
SI4427BDY-T1-E3
Manufacturer:
VISHAY
Quantity:
20 000
Part Number:
SI4427BDY-T1-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Si4427BDY
Vishay Siliconix
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
2
SPECIFICATIONS T
Parameter
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
b
50
40
30
20
10
0
0
V
1
a
a
GS
V
DS
Output Characteristics
= 10 V thru 2.5 V
a
- Drain-to-Source Voltage (V)
J
= 25 °C, unless otherwise noted
2
a
Symbol
R
V
3
I
t
t
I
I
DS(on)
GS(th)
D(on)
V
Q
Q
d(on)
d(off)
GSS
DSS
Q
g
t
t
t
SD
rr
fs
gs
gd
r
f
g
1.5 V
2 V
4
V
DS
V
I
D
DS
= - 15 V, V
≅ - 1 A, V
I
F
V
V
V
= - 30 V, V
V
V
V
V
GS
V
V
= - 2.5 A, dI/dt = 100 A/µs
GS
DS
GS
I
DS
DS
DS
5
S
DD
DS
= - 2.5 A, V
= - 4.5 V, I
Test Conditions
= - 10 V, I
= - 15 V, I
= V
= - 2.5 V, I
≤ - 5 V, V
= 0 V, V
= - 30 V, V
= - 15 V, R
GEN
GS
GS
GS
, I
= - 4.5 V, I
= - 10 V, R
D
GS
= 0 V, T
GS
D
D
D
= - 250 µA
D
GS
= - 12.6 A
= - 12.6 A
GS
= - 11.5 A
L
= ± 12 V
= - 5.1 A
= - 10 V
= 15 Ω
= 0 V
= 0 V
J
D
= 55 °C
g
= - 12.6 A
= 6 Ω
50
40
30
20
10
0
0.0
0.5
- 0.60
Min.
- 50
V
GS
Transfer Characteristics
T
25 °C
- Gate-to-Source Voltage (V)
C
= 125 °C
1.0
0.0088
0.0105
0.0150
Typ.
- 0.8
47.2
16.6
242
110
9.5
44
12
15
70
S09-0764-Rev. D, 04-May-09
Document Number: 72295
1.5
0.0105
0.0125
0.0195
± 100
- 55 °C
Max.
- 1.4
- 1.2
360
165
110
- 1
- 5
70
20
25
2.0
Unit
nA
µA
nC
ns
Ω
V
A
S
V
2.5