IRFR420APBF Vishay, IRFR420APBF Datasheet - Page 5
![MOSFET N-CH 500V 3.3A DPAK](/photos/5/46/54696/pkg_5973_sml.jpg)
IRFR420APBF
Manufacturer Part Number
IRFR420APBF
Description
MOSFET N-CH 500V 3.3A DPAK
Manufacturer
Vishay
Specifications of IRFR420APBF
Transistor Polarity
N-Channel
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
3 Ohm @ 1.5A, 10V
Drain To Source Voltage (vdss)
500V
Current - Continuous Drain (id) @ 25° C
3.3A
Vgs(th) (max) @ Id
4.5V @ 250µA
Gate Charge (qg) @ Vgs
17nC @ 10V
Input Capacitance (ciss) @ Vds
340pF @ 25V
Power - Max
83W
Mounting Type
Surface Mount
Package / Case
DPak, TO-252 (2 leads+tab), SC-63
Minimum Operating Temperature
- 55 C
Configuration
Single
Resistance Drain-source Rds (on)
3 Ohm @ 10 V
Drain-source Breakdown Voltage
500 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
3.3 A
Power Dissipation
83000 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Continuous Drain Current Id
3.3A
Drain Source Voltage Vds
500V
On Resistance Rds(on)
3ohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
4.5V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
*IRFR420APBF
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IRFR420APBF
Manufacturer:
IR
Quantity:
150 000
Document Number: 91274
S10-1135-Rev. B, 10-May-10
Fig. 9 - Maximum Drain Current vs. Case Temperature
5.0
4.0
3.0
2.0
1.0
0.0
Fig. 12a - Unclamped Inductive Test Circuit
25
0.01
R
0.1
10
20 V
0.00001
g
1
V
DS
D = 0.50
t
p
0.20
0.10
0.05
0.02
0.01
50
T , Case Temperature
C
I
AS
D.U.T
0.01 Ω
L
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
75
(THERMAL RESPONSE)
0.0001
SINGLE PULSE
100
15 V
IRFR420A, IRFU420A, SiHFR420A, SiHFU420A
Driver
( C)
°
125
+
- V
DD
A
t , Rectangular Pulse Duration (sec)
1
150
0.001
0.01
Fig. 12b - Unclamped Inductive Waveforms
I
90 %
10 %
AS
Fig. 10a - Switching Time Test Circuit
Fig. 10b - Switching Time Waveforms
V
V
DS
GS
1. Duty factor D =
2. Peak T
Notes:
R
Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %
g
10 V
V
GS
t
d(on)
J
= P
V
DS
t
DM
r
x Z
t
t / t
p
1
0.1
thJC
P
2
D.U.T.
DM
+ T
Vishay Siliconix
R
D
C
t
t
1
d(off)
V
DS
t
2
t
f
+
-
www.vishay.com
V
DD
1
5