IRFR014PBF Vishay, IRFR014PBF Datasheet - Page 3

• Manufacturer Part Number: IRFR014PBF
• Description: MOSFET N-CH 60V 7.7A DPAK
• Manufacturer: Vishay

Specifications of IRFR014PBF

• Transistor Polarity: N-Channel
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 200 mOhm @ 4.6A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 7.7A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 11nC @ 10V
• Input Capacitance (ciss) @ Vds: 300pF @ 25V
• Power - Max: 2.5W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Resistance Drain-source Rds (on): 0.2 Ohm @ 10 V
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 7.7 A
• Power Dissipation: 2500 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Continuous Drain Current Id: 7.7A
• Drain Source Voltage Vds: 60V
• On Resistance Rds(on): 200mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 4V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width ≤ 300 µs; duty cycle ≤ 2 %.
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 91263
S-82987-Rev. B, 19-Jan-09
SPECIFICATIONS T
PARAMETER
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulsed Diode Forward Current
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Forward Turn-On Time
Fig. 2 - Typical Output Characteristics, T
Fig. 1 - Typical Output Characteristics, T
J
a
= 25 °C, unless otherwise noted
SYMBOL
V
I
Q
t
SM
I
t
on
SD
S
rr
rr
C
C
= 150 °C
= 25 °C
IRFR014, IRFU014, SiHFR014, SiHFU014
MOSFET symbol
showing the
integral reverse
p - n junction diode
T
J
T
= 25 °C, I
Intrinsic turn-on time is negligible (turn-on is dominated by L
J
= 25 °C, I
TEST CONDITIONS
F
= 10 A, dI/dt = 100 A/µs
S
= 7.7 A, V
Fig. 4 - Normalized On-Resistance vs. Temperature
GS
Fig. 3 - Typical Transfer Characteristics
G
= 0 V
b
D
S
b
MIN.
-
-
-
-
-
Vishay Siliconix
TYP.
0.20
70
-
-
-
www.vishay.com
MAX.
S
0.40
140
7.7
1.6
31
and L
D
UNIT
)
µC
ns
A
V
3