IRFR014 Vishay, IRFR014 Datasheet

MOSFET N-CH 60V 7.7A DPAK

IRFR014

Manufacturer Part Number
IRFR014
Description
MOSFET N-CH 60V 7.7A DPAK
Manufacturer
Vishay
Datasheet

Specifications of IRFR014

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
200 mOhm @ 4.6A, 10V
Drain To Source Voltage (vdss)
60V
Current - Continuous Drain (id) @ 25° C
7.7A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
11nC @ 10V
Input Capacitance (ciss) @ Vds
300pF @ 25V
Power - Max
2.5W
Mounting Type
Surface Mount
Package / Case
DPak, TO-252 (2 leads+tab), SC-63
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.2 Ohms
Drain-source Breakdown Voltage
60 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
7.7 A
Power Dissipation
2.5 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Fall Time
19 ns
Minimum Operating Temperature
- 55 C
Rise Time
50 ns
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
*IRFR014

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IRFR014
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Note
a. See device orientation.
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91263
S-82987-Rev. B, 19-Jan-09
PRODUCT SUMMARY
V
R
Q
Q
Q
Configuration
ORDERING INFORMATION
Package
Lead (Pb)-free
SnPb
ABSOLUTE MAXIMUM RATINGS T
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Linear Derating Factor
Linear Derating Factor (PCB Mount)
Single Pulse Avalanche Energy
Maximum Power Dissipation
Maximum Power Dissipation (PCB Mount)
Peak Diode Recovery dV/dt
DS
DS(on)
g
gs
gd
(TO-252)
D
(Max.) (nC)
(nC)
(nC)
DPAK
(V)
(Ω)
G
S
D
(TO-251)
IPAK
a
G
c
DPAK (TO-252)
IRFR014PbF
SiHFR014-E3
IRFR014
SiHFR014
D S
b
V
GS
e
= 10 V
G
e
Single
N-Channel MOSFET
3.1
5.8
60
11
C
D
S
Power MOSFET
= 25 °C, unless otherwise noted
V
0.20
IRFR014, IRFU014, SiHFR014, SiHFU014
GS
DPAK (TO-252)
IRFR014TRLPbF
SiHFR014TL-E3
IRFR014TRL
SiHFR014TL
at 10 V
T
T
C
A
= 25 °C
= 25 °C
T
T
a
a
C
C
= 100 °C
= 25 °C
FEATURES
• Dynamic dV/dt Rating
• Surface Mount (IRFR014/SiHFR014)
• Straight Lead (IRFU014/SiHFU014)
• Available in Tape and Reel
• Fast Switching
• Ease of Paralleling
• Simple Drive Requirements
• Lead (Pb)-free Available
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized
cost-effectiveness.
The DPAK is designed for surface mounting using vapor
phase, infrared, or wave soldering techniques. The straight
lead version (IRFU/SiHFU series) is for through-hole
mounting applications. Power dissipation levels up to 1.5 W
are possible in typical surface mount applications.
a
a
SYMBOL
DPAK (TO-252)
IRFR014TRPbF
SiHFR014T-E3
IRFR014TR
SiHFR014T
dV/dt
V
V
E
I
P
device
I
DM
DS
GS
AS
D
D
a
a
design,
a
a
LIMIT
0.020
± 20
0.20
7.7
4.9
2.5
4.5
60
31
47
25
low
Vishay Siliconix
IPAK (TO-251)
IRFU014PbF
SiHFU014-E3
IRFU014
SiHFU014
on-resistance
www.vishay.com
UNIT
W/°C
V/ns
RoHS*
COMPLIANT
mJ
W
V
A
Available
and
1

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IRFR014 Summary of contents

Page 1

... Maximum Power Dissipation Maximum Power Dissipation (PCB Mount) c Peak Diode Recovery dV/ containing terminations are not RoHS compliant, exemptions may apply Document Number: 91263 S-82987-Rev. B, 19-Jan-09 IRFR014, IRFU014, SiHFR014, SiHFU014 Power MOSFET FEATURES • Dynamic dV/dt Rating 60 • Surface Mount (IRFR014/SiHFR014) 0.20 11 • ...

Page 2

... IRFR014, IRFU014, SiHFR014, SiHFU014 Vishay Siliconix ABSOLUTE MAXIMUM RATINGS T PARAMETER Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature) Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11 starting ° 924 µ ≤ dI/dt ≤ 90 A/µs, V ≤ ...

Page 3

... Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width ≤ 300 µs; duty cycle ≤ TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Fig Typical Output Characteristics, T Fig Typical Output Characteristics, T Document Number: 91263 S-82987-Rev. B, 19-Jan-09 IRFR014, IRFU014, SiHFR014, SiHFU014 SYMBOL TEST CONDITIONS MOSFET symbol I S showing the ...

Page 4

... IRFR014, IRFU014, SiHFR014, SiHFU014 Vishay Siliconix Fig Typical Capacitance vs. Drain-to-Source Voltage Fig Typical Gate Charge vs. Gate-to-Source Voltage www.vishay.com 4 Fig Typical Source-Drain Diode Forward Voltage Fig Maximum Safe Operating Area Document Number: 91263 S-82987-Rev. B, 19-Jan-09 ...

Page 5

... Fig Maximum Drain Current vs. Case Temperature Fig Maximum Effective Transient Thermal Impedance, Junction-to-Case Document Number: 91263 S-82987-Rev. B, 19-Jan-09 IRFR014, IRFU014, SiHFR014, SiHFU014 Pulse width ≤ 1 µs Duty factor ≤ 0.1 % Fig. 10a - Switching Time Test Circuit d(on) Fig. 10b - Switching Time Waveforms ...

Page 6

... IRFR014, IRFU014, SiHFR014, SiHFU014 Vishay Siliconix Vary t to obtain p required I AS D.U 0.01 Ω Fig. 12a - Unclamped Inductive Test Circuit Charge Fig. 13a - Basic Gate Charge Waveform www.vishay.com Fig. 12b - Unclamped Inductive Waveforms Fig. 12c - Maximum Avalanche Energy vs. Drain Current V DS ...

Page 7

... Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?91263. Document Number: 91263 S-82987-Rev. B, 19-Jan-09 IRFR014, IRFU014, SiHFR014, SiHFU014 Peak Diode Recovery dV/dt Test Circuit + Circuit layout considerations • Low stray inductance • ...

Page 8

... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...

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