IRFR014TRPBF Vishay, IRFR014TRPBF Datasheet - Page 2

• Manufacturer Part Number: IRFR014TRPBF
• Description: MOSFET N-CH 60V 7.7A DPAK
• Manufacturer: Vishay

Specifications of IRFR014TRPBF

• Transistor Polarity: N-Channel
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 200 mOhm @ 4.6A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 7.7A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 11nC @ 10V
• Input Capacitance (ciss) @ Vds: 300pF @ 25V
• Power - Max: 2.5W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Resistance Drain-source Rds (on): 0.2 Ohm @ 10 V
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 7.7 A
• Power Dissipation: 2500 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Continuous Drain Current Id: 7.7A
• Drain Source Voltage Vds: 60V
• On Resistance Rds(on): 200mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 4V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: IRFR014PBFTR; IRFR014TRPBF; IRFR014TRPBFTR

IRFR014, IRFU014, SiHFR014, SiHFU014
Vishay Siliconix
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. V
c. I
d. 1.6 mm from case.
e. When mounted on 1" square PCB (FR-4 or G-10 material).
Note
a. When mounted on 1" square PCB (FR-4 or G-10 material).
www.vishay.com
2
Maximum Junction-to-Ambient
Maximum Junction-to-Ambient
(PCB Mount)
ABSOLUTE MAXIMUM RATINGS T
PARAMETER
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
THERMAL RESISTANCE RATINGS
PARAMETER
Maximum Junction-to-Case (Drain)
SPECIFICATIONS T
PARAMETER
Static
Drain-Source Breakdown Voltage
V
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Internal Source Inductance
DS
SD
DD
Temperature Coefficient
≤ 10 A, dI/dt ≤ 90 A/µs, V
= 25 V, starting T
a
J
= 25 °C, L = 924 µH, R
J
DD
= 25 °C, unless otherwise noted
≤ V
DS
, T
J
≤ 150 °C.
SYMBOL
SYMBOL
ΔV
G
R
V
t
t
I
I
C
R
V
C
R
R
GS(th)
DS(on)
C
Q
Q
d(on)
d(off)
= 25 Ω, I
GSS
DSS
g
Q
L
DS
L
t
DS
oss
t
thJA
thJA
thJC
iss
rss
gd
fs
gs
r
f
D
S
g
C
/T
= 25 °C, unless otherwise noted
J
AS
= 7.7 A (see fig. 12).
Between lead,
6 mm (0.25") from
package and center of
die contact
V
V
for 10 s
GS
GS
V
R
DS
G
Reference to 25 °C, I
= 10 V
= 10 V
= 24 Ω, R
MIN.
= 48 V, V
-
-
-
V
V
V
V
f = 1.0 MHz, see fig. 5
V
TEST CONDITIONS
DS
GS
DS
DS
DD
c
= V
= 0 V, I
= 60 V, V
V
= 25 V, I
= 30 V, I
V
V
GS
DS
D
GS
GS
GS
I
= 2.7 Ω, see fig. 10
D
= ± 20 V
, I
= 25 V,
= 0 V, T
= 0 V,
see fig. 6 and 13
= 10 A, V
D
D
D
D
= 250 µA
= 250 µA
GS
I
D
SYMBOL
= 4.6 A
= 10 A,
T
= 4.6 A
= 0 V
D
TYP.
J
, T
J
= 1 mA
-
-
-
= 125 °C
DS
G
stg
= 48 V,
b
D
S
b
b
- 55 to + 150
MIN.
2.0
2.4
MAX.
60
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
110
LIMIT
5.0
50
260
d
S-82987-Rev. B, 19-Jan-09
Document Number: 91263
0.068
TYP.
300
160
4.5
7.5
29
10
50
13
19
-
-
-
-
-
-
-
-
-
-
± 100
MAX.
0.20
250
4.0
3.1
5.8
25
11
-
-
-
-
-
-
-
-
-
-
-
-
UNIT
°C/W
UNIT
°C
UNIT
V/°C
nA
µA
nC
nH
pF
ns
V
V
Ω
S