IRFR014TRPBF Vishay, IRFR014TRPBF Datasheet

MOSFET N-CH 60V 7.7A DPAK

IRFR014TRPBF

Manufacturer Part Number
IRFR014TRPBF
Description
MOSFET N-CH 60V 7.7A DPAK
Manufacturer
Vishay
Datasheets

Specifications of IRFR014TRPBF

Transistor Polarity
N-Channel
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
200 mOhm @ 4.6A, 10V
Drain To Source Voltage (vdss)
60V
Current - Continuous Drain (id) @ 25° C
7.7A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
11nC @ 10V
Input Capacitance (ciss) @ Vds
300pF @ 25V
Power - Max
2.5W
Mounting Type
Surface Mount
Package / Case
DPak, TO-252 (2 leads+tab), SC-63
Minimum Operating Temperature
- 55 C
Configuration
Single
Resistance Drain-source Rds (on)
0.2 Ohm @ 10 V
Drain-source Breakdown Voltage
60 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
7.7 A
Power Dissipation
2500 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Continuous Drain Current Id
7.7A
Drain Source Voltage Vds
60V
On Resistance Rds(on)
200mohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
4V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
IRFR014PBFTR
IRFR014TRPBF
IRFR014TRPBFTR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRFR014TRPBF
Manufacturer:
IR
Quantity:
20 000
Part Number:
IRFR014TRPBF
Quantity:
1 050
Company:
Part Number:
IRFR014TRPBF
Quantity:
5 000
Note
a. See device orientation.
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91263
S-82987-Rev. B, 19-Jan-09
PRODUCT SUMMARY
V
R
Q
Q
Q
Configuration
ORDERING INFORMATION
Package
Lead (Pb)-free
SnPb
ABSOLUTE MAXIMUM RATINGS T
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Linear Derating Factor
Linear Derating Factor (PCB Mount)
Single Pulse Avalanche Energy
Maximum Power Dissipation
Maximum Power Dissipation (PCB Mount)
Peak Diode Recovery dV/dt
DS
DS(on)
g
gs
gd
(TO-252)
D
(Max.) (nC)
(nC)
(nC)
DPAK
(V)
(Ω)
G
S
D
(TO-251)
IPAK
a
G
c
DPAK (TO-252)
IRFR014PbF
SiHFR014-E3
IRFR014
SiHFR014
D S
b
V
GS
e
= 10 V
G
e
Single
N-Channel MOSFET
3.1
5.8
60
11
C
D
S
Power MOSFET
= 25 °C, unless otherwise noted
V
0.20
IRFR014, IRFU014, SiHFR014, SiHFU014
GS
DPAK (TO-252)
IRFR014TRLPbF
SiHFR014TL-E3
IRFR014TRL
SiHFR014TL
at 10 V
T
T
C
A
= 25 °C
= 25 °C
T
T
a
a
C
C
= 100 °C
= 25 °C
FEATURES
• Dynamic dV/dt Rating
• Surface Mount (IRFR014/SiHFR014)
• Straight Lead (IRFU014/SiHFU014)
• Available in Tape and Reel
• Fast Switching
• Ease of Paralleling
• Simple Drive Requirements
• Lead (Pb)-free Available
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized
cost-effectiveness.
The DPAK is designed for surface mounting using vapor
phase, infrared, or wave soldering techniques. The straight
lead version (IRFU/SiHFU series) is for through-hole
mounting applications. Power dissipation levels up to 1.5 W
are possible in typical surface mount applications.
a
a
SYMBOL
DPAK (TO-252)
IRFR014TRPbF
SiHFR014T-E3
IRFR014TR
SiHFR014T
dV/dt
V
V
E
I
P
device
I
DM
DS
GS
AS
D
D
a
a
design,
a
a
LIMIT
0.020
± 20
0.20
7.7
4.9
2.5
4.5
60
31
47
25
low
Vishay Siliconix
IPAK (TO-251)
IRFU014PbF
SiHFU014-E3
IRFU014
SiHFU014
on-resistance
www.vishay.com
UNIT
W/°C
V/ns
RoHS*
COMPLIANT
mJ
W
V
A
Available
and
1

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IRFR014TRPBF Summary of contents

Page 1

... DPAK (TO-252) a IRFR014TRLPbF a SiHFR014TL-E3 a IRFR014TRL a SiHFR014TL = 25 °C, unless otherwise noted ° 100 ° ° °C A Vishay Siliconix device design, low on-resistance DPAK (TO-252) IPAK (TO-251) a IRFR014TRPbF IRFU014PbF a SiHFR014T-E3 SiHFU014-E3 a IRFR014TR IRFU014 a SiHFR014T SiHFU014 SYMBOL LIMIT ± 7 4 0.20 0.020 2.5 dV/dt 4 ...

Page 2

... IRFR014, IRFU014, SiHFR014, SiHFU014 Vishay Siliconix ABSOLUTE MAXIMUM RATINGS T PARAMETER Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature) Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11 starting ° 924 µ ≤ dI/dt ≤ 90 A/µs, V ≤ ...

Page 3

... S showing the integral reverse junction diode ° 7 ° dI/dt = 100 A/µ Intrinsic turn-on time is negligible (turn-on is dominated ° 150 °C Fig Normalized On-Resistance vs. Temperature C Vishay Siliconix MIN. TYP. MAX 7 1 140 b - 0.20 0.40 and L S Fig Typical Transfer Characteristics www.vishay.com UNIT ...

Page 4

... IRFR014, IRFU014, SiHFR014, SiHFU014 Vishay Siliconix Fig Typical Capacitance vs. Drain-to-Source Voltage Fig Typical Gate Charge vs. Gate-to-Source Voltage www.vishay.com 4 Fig Typical Source-Drain Diode Forward Voltage Fig Maximum Safe Operating Area Document Number: 91263 S-82987-Rev. B, 19-Jan-09 ...

Page 5

... Fig Maximum Effective Transient Thermal Impedance, Junction-to-Case Document Number: 91263 S-82987-Rev. B, 19-Jan-09 IRFR014, IRFU014, SiHFR014, SiHFU014 Pulse width ≤ 1 µs Duty factor ≤ 0.1 % Fig. 10a - Switching Time Test Circuit d(on) Fig. 10b - Switching Time Waveforms Vishay Siliconix D.U. d(off) f www.vishay.com 5 ...

Page 6

... IRFR014, IRFU014, SiHFR014, SiHFU014 Vishay Siliconix Vary t to obtain p required I AS D.U 0.01 Ω Fig. 12a - Unclamped Inductive Test Circuit Charge Fig. 13a - Basic Gate Charge Waveform www.vishay.com Fig. 12b - Unclamped Inductive Waveforms Fig. 12c - Maximum Avalanche Energy vs. Drain Current V DS ...

Page 7

... V GS Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?91263. Document Number: 91263 S-82987-Rev ...

Page 8

... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...

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