IRLR014PBF Vishay, IRLR014PBF Datasheet - Page 2

• Manufacturer Part Number: IRLR014PBF
• Description: MOSFET N-CH 60V 7.7A DPAK
• Manufacturer: Vishay

Specifications of IRLR014PBF

• Transistor Polarity: N-Channel
• Continuous Drain Current Id: 7.7A
• Drain Source Voltage Vds: 60V
• On Resistance Rds(on): 200mohm
• Rds(on) Test Voltage Vgs: 5V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 200 mOhm @ 4.6A, 5V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 7.7A
• Vgs(th) (max) @ Id: 2V @ 250µA
• Gate Charge (qg) @ Vgs: 8.4nC @ 5V
• Input Capacitance (ciss) @ Vds: 400pF @ 25V
• Power - Max: 2.5W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Resistance Drain-source Rds (on): 0.2 Ohm @ 5 V
• Forward Transconductance Gfs (max / Min): 3.4 S
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: +/- 10 V
• Continuous Drain Current: 7.7 A
• Power Dissipation: 2500 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Voltage Vgs Max: 10V
• Operating Temperature: RoHS Compliant
• Threshold Voltage Vgs Typ: 2V
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

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