IRLR014PBF Vishay, IRLR014PBF Datasheet

MOSFET N-CH 60V 7.7A DPAK

IRLR014PBF

Manufacturer Part Number
IRLR014PBF
Description
MOSFET N-CH 60V 7.7A DPAK
Manufacturer
Vishay
Datasheets

Specifications of IRLR014PBF

Transistor Polarity
N-Channel
Continuous Drain Current Id
7.7A
Drain Source Voltage Vds
60V
On Resistance Rds(on)
200mohm
Rds(on) Test Voltage Vgs
5V
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
200 mOhm @ 4.6A, 5V
Drain To Source Voltage (vdss)
60V
Current - Continuous Drain (id) @ 25° C
7.7A
Vgs(th) (max) @ Id
2V @ 250µA
Gate Charge (qg) @ Vgs
8.4nC @ 5V
Input Capacitance (ciss) @ Vds
400pF @ 25V
Power - Max
2.5W
Mounting Type
Surface Mount
Package / Case
DPak, TO-252 (2 leads+tab), SC-63
Minimum Operating Temperature
- 55 C
Configuration
Single
Resistance Drain-source Rds (on)
0.2 Ohm @ 5 V
Forward Transconductance Gfs (max / Min)
3.4 S
Drain-source Breakdown Voltage
60 V
Gate-source Breakdown Voltage
+/- 10 V
Continuous Drain Current
7.7 A
Power Dissipation
2500 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Voltage Vgs Max
10V
Operating Temperature
RoHS Compliant
Threshold Voltage Vgs Typ
2V
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRLR014PBF
Manufacturer:
VISHAY
Quantity:
7 904
Part Number:
IRLR014PBF
Manufacturer:
IR/VSHAY
Quantity:
20 000
Company:
Part Number:
IRLR014PBF
Quantity:
15 045
Note
a. See device orientation.
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. V
c. I
d. 1.6 mm from case.
e. When mounted on 1" square PCB (FR-4 or G-10 material).
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91321
S09-0058-Rev. A, 02-Feb-09
PRODUCT SUMMARY
V
R
Q
Q
Q
Configuration
ORDERING INFORMATION
Package
Lead (Pb)-free
SnPb
ABSOLUTE MAXIMUM RATINGS T
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Linear Derating Factor
Linear Derating Factor (PCB Mount)
Single Pulse Avalanche Energy
Maximum Power Dissipation
Maximum Power Dissipation (PCB Mount)
Peak Diode Recovery dV/dt
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
(TO-252)
D
DS
DS(on)
g
gs
gd
SD
DPAK
DD
(Max.) (nC)
(nC)
(nC)
(V)
≤ 10 A, dI/dt ≤ 90 A/µs, V
= 25 V, starting T
(Ω)
G
S
D
(TO-251)
IPAK
a
J
= 25 °C, L = 924 µH, R
G
c
D S
DPAK (TO-252)
IRLR014PbF
SiHLR014-E3
IRLR014
SiHLR014
DD
b
V
≤ V
GS
e
= 5.0 V
DS
G
, T
J
N-Channel MOSFET
e
≤ 150 °C.
Single
8.4
3.5
6.0
60
G
= 25 Ω, I
D
S
C
Power MOSFET
V
= 25 °C, unless otherwise noted
0.20
IRLR014, IRLU014, SiHLR014, SiHLU014
GS
DPAK (TO-252)
IRLR014TRPbF
SiHLR014T-E3
IRLR014TR
SiHLR014T
AS
at 5.0 V
= 7.7 A (see fig. 12).
T
T
for 10 s
C
A
= 25 °C
= 25 °C
a
a
T
T
C
C
= 100 °C
a
= 25 °C
FEATURES
• Dynamic dV/dt Rating
• Surface Mount (IRLR014, SiHLR014)
• Straight Lead (IRLU014, SiHLU014)
• Available in Tape and Reel
• Logic-Level Gate Drive
• R
• Fast Switching
• Lead (Pb)-free Available
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized
cost-effectiveness.
The DPAK is designed for surface mounting using vapor
phase, infrared, or wave soldering techniques. The straight
lead version (IRLU, SiHLU series) is for through-hole
mounting applications. Power dissipation levels up to 1.5 W
are possible in typical surface mount applications.
a
DS(on)
Specified at V
SYMBOL
DPAK (TO-252)
IRLR014TRLPbF
SiHLR014TL-E3
IRLR014TRL
SiHLR014TL
T
dV/dt
J
V
V
E
I
P
, T
device
I
DM
DS
GS
AS
D
D
stg
a
a
design,
GS
a
a
= 4 V and 5 V
- 55 to + 150
LIMIT
0.020
260
± 10
0.20
7.7
4.9
2.5
4.5
60
31
47
25
low
Vishay Siliconix
d
IPAK (TO-251)
IRLU014PbF
SiHLU014-E3
IRLU014
SiHLU014
on-resistance
www.vishay.com
UNIT
W/°C
V/ns
RoHS*
COMPLIANT
mJ
°C
W
V
A
Available
and
1

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IRLR014PBF Summary of contents

Page 1

... Configuration DPAK IPAK (TO-252) (TO-251 ORDERING INFORMATION Package DPAK (TO-252) IRLR014PbF Lead (Pb)-free SiHLR014-E3 IRLR014 SnPb SiHLR014 Note a. See device orientation. ABSOLUTE MAXIMUM RATINGS T PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Current a Pulsed Drain Current Linear Derating Factor e Linear Derating Factor (PCB Mount) ...

Page 2

... IRLR014, IRLU014, SiHLR014, SiHLU014 Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER Maximum Junction-to-Ambient Maximum Junction-to-Ambient a (PCB Mount) Maximum Junction-to-Case (Drain) Note a. When mounted on 1" square PCB (FR-4 or G-10 material). SPECIFICATIONS °C, unless otherwise noted J PARAMETER Static Drain-Source Breakdown Voltage V Temperature Coefficient DS Gate-Source Threshold Voltage ...

Page 3

... TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Fig Typical Output Characteristics, T Fig Typical Output Characteristics, T Document Number: 91321 S09-0058-Rev. A, 02-Feb-09 IRLR014, IRLU014, SiHLR014, SiHLU014 = 25 °C Fig Typical Transfer Characteristics C = 150 °C Fig Normalized On-Resistance vs. Temperature C Vishay Siliconix www.vishay.com 3 ...

Page 4

... IRLR014, IRLU014, SiHLR014, SiHLU014 Vishay Siliconix Fig Typical Capacitance vs. Drain-to-Source Voltage Fig Typical Gate Charge vs. Gate-to-Source Voltage www.vishay.com 4 Fig Typical Source-Drain Diode Forward Voltage Fig Maximum Safe Operating Area Document Number: 91321 S09-0058-Rev. A, 02-Feb-09 ...

Page 5

... Fig Maximum Effective Transient Thermal Impedance, Junction-to-Case Document Number: 91321 S09-0058-Rev. A, 02-Feb-09 IRLR014, IRLU014, SiHLR014, SiHLU014 Pulse width ≤ 1 µs Duty factor ≤ 0.1 % Fig. 10a - Switching Time Test Circuit d(on) Fig. 10b - Switching Time Waveforms Vishay Siliconix D.U. d(off) f www.vishay.com 5 ...

Page 6

... IRLR014, IRLU014, SiHLR014, SiHLU014 Vishay Siliconix Vary t to obtain p required I AS D.U 0.01 Ω Fig. 12a - Unclamped Inductive Test Circuit Charge Fig. 13a - Basic Gate Charge Waveform www.vishay.com Fig. 12b - Unclamped Inductive Waveforms Fig. 12c - Maximum Avalanche Energy vs. Drain Current V DS ...

Page 7

... V GS Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?91321. Document Number: 91321 S09-0058-Rev ...

Page 8

... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...

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