ZXMN3A01E6TC Diodes Zetex, ZXMN3A01E6TC Datasheet

MOSFET N-CHAN 30V SOT23-6

ZXMN3A01E6TC

Manufacturer Part Number
ZXMN3A01E6TC
Description
MOSFET N-CHAN 30V SOT23-6
Manufacturer
Diodes Zetex
Datasheet

Specifications of ZXMN3A01E6TC

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
120 mOhm @ 2.5A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
2.4A
Vgs(th) (max) @ Id
1V @ 250µA
Gate Charge (qg) @ Vgs
3.9nC @ 10V
Input Capacitance (ciss) @ Vds
190pF @ 25V
Power - Max
1.1W
Mounting Type
Surface Mount
Package / Case
SOT-23-6
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
ZXMN3A01E6TC
Manufacturer:
ZETEX
Quantity:
45 000
30V N-CHANNEL ENHANCEMENT MODE MOSFET
SUMMARY
V
DESCRIPTION
This new generation of TRENCH MOSFETs from Zetex utilizes a unique structure
that combines the benefits of low on-resistance with fast switching speed. This
makes them ideal for high efficiency, low voltage, power management
applications.
FEATURES
APPLICATIONS
ORDERING INFORMATION
DEVICE MARKING
ISSUE 2 - JULY 2002
DEVICE
ZXMN3A01E6TA
ZXMN3A01E6TC
(BR)DSS
Low on-resistance
Fast switching speed
Low threshold
Low gate drive
SOT23-6 package
DC - DC Converters
Power Management Functions
Disconnect switches
Motor control
3A1
= 30V; R
DS(ON)
REEL
SIZE
13”
7”
= 0.12
WIDTH
TAPE
8mm
8mm
I
D
10000 units
QUANTITY
3000 units
= 3.0A
PER REEL
1
ZXMN3A01E6
PINOUT
Top View

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ZXMN3A01E6TC Summary of contents

Page 1

... Low gate drive SOT23-6 package APPLICATIONS Converters Power Management Functions Disconnect switches Motor control ORDERING INFORMATION DEVICE REEL TAPE SIZE WIDTH ZXMN3A01E6TA 7” 8mm ZXMN3A01E6TC 13” 8mm DEVICE MARKING 3A1 ISSUE 2 - JULY 2002 I = 3.0A D QUANTITY PER REEL 3000 units 10000 units 1 ZXMN3A01E6 PINOUT ...

Page 2

ZXMN3A01E6 ABSOLUTE MAXIMUM RATINGS. PARAMETER Drain-Source Voltage Gate Source Voltage Continuous Drain Current V GS =10V =25°C ( =10V =70°C ( =10V =25°C (a) Pulsed Drain Current (c) Continuous Source ...

Page 3

R DS(on) Limited 100m 100ms 10ms 1ms Single Pulse 10m T =25°C amb 100m 1 V Collector-Emitter Voltage (V) DS Safe Operating Area 120 T =25°C amb 100 80 D=0 D=0.2 20 D=0.1 100µ ...

Page 4

ZXMN3A01E6 ELECTRICAL CHARACTERISTICS PARAMETER STATIC Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Gate-Source Threshold Voltage Static Drain-Source On-State Resistance (1) Forward Transconductance (1)(3) DYNAMIC (3) Input Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHING(2) (3) Turn-On Delay Time ...

Page 5

T = 25°C 10V 0.1 0 Drain-Source Voltage (V) DS Output Characteristics 10V 150° 25°C 0.1 2.0 2.5 3.0 3.5 V Gate-Source Voltage (V) GS Typical ...

Page 6

ZXMN3A01E6 300 250 200 C ISS 150 100 Drain - Source Voltage (V) DS Capacitance v Drain-Source Voltage TYPICAL CHARACTERISTICS 2. 1MHz 8 6 ...

Page 7

PACKAGE OUTLINE CONTROLLING DIMENSIONS IN MILLIMETRES APPROX CONVERSIONS INCHES. PACKAGE DIMENSIONS Millimetres DIM Min Max A 0.90 1.45 A1 0.00 0.15 A2 0.90 1.30 b 0.35 0.50 C 0.09 0.20 D 2.80 ...

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