ZXMN3A01E6TC Diodes Zetex, ZXMN3A01E6TC Datasheet - Page 3

• Manufacturer Part Number: ZXMN3A01E6TC
• Description: MOSFET N-CHAN 30V SOT23-6
• Manufacturer: Diodes Zetex

Specifications of ZXMN3A01E6TC

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 120 mOhm @ 2.5A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 2.4A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 3.9nC @ 10V
• Input Capacitance (ciss) @ Vds: 190pF @ 25V
• Power - Max: 1.1W
• Mounting Type: Surface Mount
• Package / Case: SOT-23-6
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

ISSUE 2 - JULY 2002
100m
10m
120
100
80
60
40
20
10
100m
100µ 1m
1
R
Limited
Single Pulse
Transient Thermal Impedance
D=0.5
D=0.2
V
T
DS(on)
T
amb
amb
DS
=25°C
=25°C
Collector-Emitter Voltage (V)
Safe Operating Area
DC
10m 100m
Pulse Width (s)
1s
100ms
1
10ms
D=0.1
1ms
1
D=0.05
100µs
Single Pulse
10
10
CHARACTERISTICS
100
1k
3
100
1.2
1.0
0.8
0.6
0.4
0.2
0.0
0.1
10
100µ 1m
1
0
20
Pulse Power Dissipation
40
Temperature (°C)
10m 100m
Derating Curve
Pulse Width (s)
60
ZXMN3A01E6
80
1
100 120 140 160
Single Pulse
10
T
amb
=25°C
100
1k