ZXMN3A03E6 Diodes Inc, ZXMN3A03E6 Datasheet

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ZXMN3A03E6

Manufacturer Part Number
ZXMN3A03E6
Description
MOSFET, N CH, 30V, 4.6A, SOT-23
Manufacturer
Diodes Inc
Datasheet

Specifications of ZXMN3A03E6

Transistor Polarity
N Channel
Continuous Drain Current Id
4.6A
Drain Source Voltage Vds
30V
On Resistance Rds(on)
50mohm
Rds(on) Test Voltage Vgs
10V
Power Dissipation Pd
1.7W
No. Of Pins
3
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
ZXMN3A03E6
Manufacturer:
ZETEX
Quantity:
20 000
Part Number:
ZXMN3A03E6TA
Manufacturer:
ZETEX
Quantity:
45 000
Part Number:
ZXMN3A03E6TA
Manufacturer:
ZETEX/DIODES
Quantity:
20 000
Part Number:
ZXMN3A03E6TC
Manufacturer:
ZETEX
Quantity:
39 000
30V N-CHANNEL ENHANCEMENT MODE MOSFET
SUMMARY
V
DESCRIPTION
This new generation of TRENCH MOSFETs from Zetex utilizes a unique structure
that combines the benefits of low on-resistance with fast switching speed. This
makes them ideal for high efficiency, low voltage, power management
applications.
FEATURES
APPLICATIONS
ORDERING INFORMATION
DEVICE MARKING
ISSUE 3 - OCTOBER 2005
DEVICE
ZXMN3A03E6TA
ZXMN3A03E6TC
(BR)DSS
Low on-resistance
Fast switching speed
Low threshold
Low gate drive
SOT23-6 package
DC - DC converters
Power management functions
Disconnect switches
Motor control
3A3
= 30V; R
DS(ON)
REEL
SIZE
13”
7”
= 0.050
WIDTH
TAPE
8mm
8mm
I
D
= 4.6A
10000 units
QUANTITY
3000 units
PER REEL
1
ZXMN3A03E6
S E M I C O N D U C T O R S
PINOUT
Top View

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ZXMN3A03E6 Summary of contents

Page 1

... Power management functions • Disconnect switches • Motor control ORDERING INFORMATION DEVICE REEL TAPE SIZE WIDTH ZXMN3A03E6TA 7” 8mm ZXMN3A03E6TC 13” 8mm DEVICE MARKING • 3A3 ISSUE 3 - OCTOBER 2005 I = 4.6A D QUANTITY PER REEL 3000 units 10000 units 1 ZXMN3A03E6 PINOUT Top View ...

Page 2

... ZXMN3A03E6 ABSOLUTE MAXIMUM RATINGS. PARAMETER Drain-source voltage Gate source voltage Continuous drain current V =10V =10V =10V (c) Pulsed drain current Continuous source current (body diode) Pulsed source current (body diode) (a) Power dissipation at T =25°C A Linear derating factor (b) Power dissipation at T =25°C A Linear derating factor ...

Page 3

... ISSUE 3 - OCTOBER 2005 CHARACTERISTICS 3 ZXMN3A03E6 ...

Page 4

... ZXMN3A03E6 ELECTRICAL CHARACTERISTICS PARAMETER STATIC Drain-source breakdown voltage Zero gate voltage drain current Gate-body leakage Gate-source threshold voltage Static drain-source on-state resistance (1)(3) Forward transconductance (3) DYNAMIC Input capacitance Output capacitance Reverse transfer capacitance (2) (3) SWITCHING Turn-on delay time Rise time Turn-off delay time ...

Page 5

... ISSUE 3 - OCTOBER 2005 TYPICAL CHARACTERISTICS 5 ZXMN3A03E6 ...

Page 6

... ZXMN3A03E6 TYPICAL CHARACTERISTICS 6 ISSUE 3 - OCTOBER 2005 ...

Page 7

... Metroplaza Tower 1 Hing Fong Road, Kwai Fong Hong Kong Telephone: (852) 26100 611 Fax: (852) 24250 494 asia.sales@zetex.com 7 ZXMN3A03E6 Corporate Headquarters Zetex Semiconductors plc Zetex Technology Park Chadderton, Oldham, OL9 9LL United Kingdom Telephone (44) 161 622 4444 Fax: (44) 161 622 4446 hq@zetex ...

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