ZXM61P03FTC Diodes Zetex, ZXM61P03FTC Datasheet

MOSFET P-CHAN 30V SOT23-3

ZXM61P03FTC

Manufacturer Part Number
ZXM61P03FTC
Description
MOSFET P-CHAN 30V SOT23-3
Manufacturer
Diodes Zetex
Datasheet

Specifications of ZXM61P03FTC

Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
350 mOhm @ 600mA, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
1.1A
Vgs(th) (max) @ Id
1V @ 250µA
Gate Charge (qg) @ Vgs
4.8nC @ 10V
Input Capacitance (ciss) @ Vds
140pF @ 25V
Power - Max
625mW
Mounting Type
Surface Mount
Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
ZXM61P03FTC
Manufacturer:
Diodes
Quantity:
24 600
Part Number:
ZXM61P03FTC
Manufacturer:
ZETEX/DIODES
Quantity:
20 000
30V P-CHANNEL ENHANCEMENT MODE MOSFET
SUMMARY
V
DESCRIPTION
This new generation of high density MOSFETs from Zetex utilizes a unique
structure that combines the benefits of low on-resistance with fast switching
speed. This makes them ideal for high efficiency, low voltage, power
management applications.
FEATURES
APPLICATIONS
ORDERING INFORMATION
DEVICE MARKING
P03
ISSUE 1 - OCTOBER 2005
DEVICE
ZXM61P03FTA
ZXM61P03FTC
(BR)DSS
Low on-resistance
Fast switching speed
Low threshold
Low gate drive
SOT23 package
DC - DC converters
Power management functions
Disconnect switches
Motor control
=-30V; R
DS(ON)
REEL SIZE
(inches)
=0.35 ; I
13
7
D
=-1.1A
TAPE WIDTH
8 embossed
8 embossed
(mm)
1
QUANTITY
PER REEL
10,000
3,000
ZXM61P03F
S E M I C O N D U C T O R S
Top view
Pin out
SOT23

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ZXM61P03FTC Summary of contents

Page 1

... SOT23 package APPLICATIONS • converters • Power management functions • Disconnect switches • Motor control ORDERING INFORMATION DEVICE REEL SIZE (inches) ZXM61P03FTA 7 ZXM61P03FTC 13 DEVICE MARKING P03 ISSUE 1 - OCTOBER 2005 =-1.1A D TAPE WIDTH QUANTITY (mm) PER REEL 8 embossed 3,000 8 embossed 10,000 1 ZXM61P03F ...

Page 2

ABSOLUTE MAXIMUM RATINGS PARAMETER Drain-Source Voltage Gate- Source Voltage Continuous Drain Current (V =-10V =-10V Pulsed Drain Current (c) Continuous Source Current (Body Diode)(b) Pulsed Source Current (Body Diode)(c) Power Dissipation at T =25°C (a) ...

Page 3

ISSUE 1 - OCTOBER 2005 CHARACTERISTICS 3 ZXM61P03F ...

Page 4

ELECTRICAL CHARACTERISTICS (at T PARAMETER STATIC Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Gate-Source Threshold Voltage Static Drain-Source On-State Resistance (1) R Forward Transconductance (3) DYNAMIC (3) Input Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHING(2) (3) Turn-On ...

Page 5

ISSUE 1 - OCTOBER 2005 TYPICAL CHARACTERISTICS 5 ZXM61P03F ...

Page 6

Drain Source Voltage (V) DS Capacitance v Drain-Source Voltage Charge Basic gate charge waveform d(off ...

Page 7

PACKAGE DETAILS leads PACKAGE DIMENSIONS Millimeters Inches DIM Min Max Min Max A 2.67 3.05 0.105 0.120 B 1.20 1.40 0.047 0.055 C 1.10 0.043 D 0.37 0.53 0.015 0.021 F ...

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