ZXM61N02 Zetex Semiconductors, ZXM61N02 Datasheet

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ZXM61N02

Manufacturer Part Number
ZXM61N02
Description
20V N-CHANNEL ENHANCEMENT MODE MOSFET
Manufacturer
Zetex Semiconductors
Datasheet

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20V N-CHANNEL ENHANCEMENT MODE MOSFET
SUMMARY
V
DESCRIPTION
This new generation of high density MOSFETs from Zetex utilises a unique
structure that combines the benefits of low on-resistance with fast switching
speed. This makes them ideal for high efficiency, low voltage, power
management applications.
FEATURES
APPLICATIONS
ORDERING INFORMATION
DEVICE MARKING
PROVISIONAL ISSUE A - MAY 1999
DEVICE
ZXM61N02FTA
ZXM61N02FTC
(BR)DSS
Low on-resistance
Fast switching speed
Low threshold
Low gate drive
SOT23 package
DC - DC Converters
Power Management Functions
Disconnect switches
Motor control
N02
=20V; R
REEL SIZE
(inches)
DS(ON)
13
7
=0.18
TAPE WIDTH (mm)
8mm embossed
8mm embossed
I
D
=1.7A
57
QUANTITY
PER REEL
3000 units
10000 units
ZXM61N02F
SOT23
Top View

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ZXM61N02 Summary of contents

Page 1

... Converters Power Management Functions Disconnect switches Motor control ORDERING INFORMATION DEVICE REEL SIZE (inches) ZXM61N02FTA 7 ZXM61N02FTC 13 DEVICE MARKING N02 PROVISIONAL ISSUE A - MAY 1999 I =1.7A D TAPE WIDTH (mm) QUANTITY PER REEL 8mm embossed 3000 units 8mm embossed 10000 units 57 ZXM61N02F SOT23 Top View ...

Page 2

... ZXM61N02F ABSOLUTE MAXIMUM RATINGS. PARAMETER Drain-Source Voltage Gate Source Voltage Continuous Drain Current (V =4.5V =4.5V Pulsed Drain Current (c) Continuous Source Current (Body Diode) (b) Pulsed Source Current (Body Diode) Power Dissipation at T =25°C (a) A Linear Derating Factor Power Dissipation at T =25°C (b) ...

Page 3

... Transient Thermal Impedance PROVISIONAL ISSUE A - MAY 1999 CHARACTERISTICS 1.0 0.8 0.6 0.4 0 100 0 240 200 160 120 80 40 D=0 0.0001 59 ZXM61N02F Refer Note (b) Refer Note ( 100 120 140 T - Temperature (°C) Derating Curve Refer Note (a) D=0.5 D=0.2 Single Pulse D=0.05 0.001 0.01 0 100 Pulse Width (s) Transient Thermal Impedance ...

Page 4

... ZXM61N02F ELECTRICAL CHARACTERISTICS PARAMETER STATIC Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Gate-Source Threshold Voltage Static Drain-Source On-State Resistance (1) Forward Transconductance (3) DYNAMIC (3) Input Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHING(2) (3) Turn-On Delay Time Rise Time Turn-Off Delay Time ...

Page 5

... Normalised R 100 10 1 100m 10m 1m 100µ 10 100 0.2 Source-Drain Diode Forward Voltage 61 ZXM61N02F Drain-Source Voltage (V) DS Output Characteristics R DS(on) V =4. =0.93A =250µ GS(th) 0 100 200 T - Junction Temperature (°C) J and V DS(on) GS(th) v Temperature T=150° ...

Page 6

... ZXM61N02F 400 Ciss 300 Coss Crss 200 100 0 0 Drain-Source Voltage (V) DS Capacitance v Drain-Source Voltage Basic Gate Charge Waveform Switching Time Waveforms PROVISIONAL ISSUE A - MAY 1999 TYPICAL CHARACTERISTICS 5 V =0V GS f=1MHz 100 0 Gate-Source Voltage v Gate Charge Gate Charge Test Circuit ...

Page 7

... ZXM61N02F PACKAGE DIMENSIONS DIM Millimetres Min Max A 2.67 3.05 B 1.20 1.40 C – 1.10 D 0.37 0.53 F 0.085 0.15 G NOM 1.9 K 0.01 0.10 L 2.10 2.50 N NOM 0.95 Zetex plc. Fields New Road, Chadderton, Oldham, OL9-8NP, United Kingdom. Telephone: (44)161 622 4422 (Sales), (44)161 622 4444 (General Enquiries) Fax: (44)161 622 4420 Zetex GmbH Zetex Inc. ...

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