ZXM61P03FTC Diodes Zetex, ZXM61P03FTC Datasheet - Page 4

MOSFET P-CHAN 30V SOT23-3

ZXM61P03FTC

Manufacturer Part Number
ZXM61P03FTC
Description
MOSFET P-CHAN 30V SOT23-3
Manufacturer
Diodes Zetex
Datasheet

Specifications of ZXM61P03FTC

Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
350 mOhm @ 600mA, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
1.1A
Vgs(th) (max) @ Id
1V @ 250µA
Gate Charge (qg) @ Vgs
4.8nC @ 10V
Input Capacitance (ciss) @ Vds
140pF @ 25V
Power - Max
625mW
Mounting Type
Surface Mount
Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
ZXM61P03FTC
Manufacturer:
Diodes
Quantity:
24 600
Part Number:
ZXM61P03FTC
Manufacturer:
ZETEX/DIODES
Quantity:
20 000
ELECTRICAL CHARACTERISTICS (at T
NOTES:
(1) Measured under pulsed conditions. Width=300µs. Duty cycle
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.
ISSUE 1 - OCTOBER 2005
PARAMETER
STATIC
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
Gate-Source Threshold Voltage
Static Drain-Source On-State Resistance (1) R
Forward Transconductance (3)
DYNAMIC (3)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING(2) (3)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate-Source Charge
Gate Drain Charge
SOURCE-DRAIN DIODE
Diode Forward Voltage (1)
Reverse Recovery Time (3)
Reverse Recovery Charge(3)
amb
SYMBOL
V
I
I
V
g
C
C
C
t
t
t
t
Q
Q
Q
V
t
Q
DSS
GSS
d(on)
r
d(off)
f
rr
fs
(BR)DSS
GS(th)
DS(on)
iss
oss
rss
SD
g
gs
gd
rr
= 25°C unless otherwise stated).
2%.
4
MIN.
0.44
-1.0
-30
TYP.
14.8
140
1.9
2.9
8.9
5.0
7.7
45
20
MAX.
-0.95
0.35
0.55
0.62
4.8
1.3
-1
100
UNIT CONDITIONS.
V
µA
nA
V
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
ns
nC
ZXM61P03F
I
V
I
V
V
V
V
f=1MHz
V
R
(Refer to test circuit)
V
I
(Refer to test circuit)
T
V
T
di/dt= 100A/µs
D
V
D
D
j
j
DS
GS
GS
DS
DS
DD
G
DS
GS
=-250µA, V
=-250µA, V
=-0.6A
=25°C, I
=25°C, I
GS
=6.2Ω, R
S E M I C O N D U C T O R S
=-30V, V
=-10V, I
=-4.5V, I
=-10V,I
=-25 V, V
=-24V,V
=0V
=-15V, I
= 20V, V
S
F
=-0.6A,
D
=-0.6A,
D
D
GS
=-0.3A
D
GS
D
=25Ω
GS
DS
=-0.6A
GS
=-0.6A
=-0.3A
DS
=-10V,
=0V
= V
=0V
=0V,
=0V
GS

Related parts for ZXM61P03FTC