STB85NF55LT4 STMicroelectronics, STB85NF55LT4 Datasheet - Page 6

• Manufacturer Part Number: STB85NF55LT4
• Description: MOSFET N-CH 55V 80A D2PAK
• Manufacturer: STMicroelectronics
• Series: STripFET™r

Specifications of STB85NF55LT4

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 8 mOhm @ 40A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 80A
• Vgs(th) (max) @ Id: 2.5V @ 250µA
• Gate Charge (qg) @ Vgs: 110nC @ 5V
• Input Capacitance (ciss) @ Vds: 4050pF @ 25V
• Power - Max: 300W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.008 Ohms
• Forward Transconductance Gfs (max / Min): 130 S
• Drain-source Breakdown Voltage: 55 V
• Gate-source Breakdown Voltage: +/- 15 V
• Continuous Drain Current: 80 A
• Power Dissipation: 300 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-5732-2

Electrical characteristics
2.1
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Figure 2.
Figure 4.
Figure 6.
Electrical characteristics (curves)
Safe operating area
Output characteristics
Transconductance
Doc ID 8544 Rev 8
Figure 3.
Figure 5.
Figure 7.
Thermal impedance
Transfer characteristics
Static drain-source on resistance
STB85NF55L, STP85NF55L