STB85NF55LT4 STMicroelectronics, STB85NF55LT4 Datasheet - Page 4
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STB85NF55LT4
Manufacturer Part Number
STB85NF55LT4
Description
MOSFET N-CH 55V 80A D2PAK
Manufacturer
STMicroelectronics
Series
STripFET™r
Datasheet
1.STB85NF55LT4.pdf
(14 pages)
Specifications of STB85NF55LT4
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
8 mOhm @ 40A, 10V
Drain To Source Voltage (vdss)
55V
Current - Continuous Drain (id) @ 25° C
80A
Vgs(th) (max) @ Id
2.5V @ 250µA
Gate Charge (qg) @ Vgs
110nC @ 5V
Input Capacitance (ciss) @ Vds
4050pF @ 25V
Power - Max
300W
Mounting Type
Surface Mount
Package / Case
D²Pak, TO-263 (2 leads + tab)
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.008 Ohms
Forward Transconductance Gfs (max / Min)
130 S
Drain-source Breakdown Voltage
55 V
Gate-source Breakdown Voltage
+/- 15 V
Continuous Drain Current
80 A
Power Dissipation
300 W
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-5732-2
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
STB85NF55LT4
Manufacturer:
ST
Quantity:
20 000
Electrical characteristics
2
4/14
Electrical characteristics
(T
Table 4.
Table 5.
1. Pulsed: pulse duration=300µs, duty cycle 1.5%
Table 6.
V
Symbol
Symbol
Symbol
R
CASE
V
(BR)DSS
g
t
t
C
I
I
DS(on)
C
C
GS(th)
Q
Q
d(on)
d(off)
DSS
GSS
fs
Q
oss
t
t
rss
iss
gs
gd
r
f
g
(1)
= 25 °C unless otherwise specified)
Forward transconductance
Input capacitance
Output capacitance
Reverse transfer
capacitance
Total gate charge
Gate-source charge
Gate-drain charge
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Drain-source breakdown
voltage
Zero gate voltage drain
current (V
Gate body leakage current
(V
Gate threshold voltage
Static drain-source on
resistance
On/off states
Dynamic
Switching times
DS
= 0)
Parameter
Parameter
Parameter
GS
= 0)
Doc ID 8544 Rev 8
V
R
Figure 14 on page 8
I
V
V
V
V
V
V
V
V
V
V
V
D
DD
DS
DS
GS
DS
GS
GS
GS
GS
G
DS
DS
DD
= 250 µA, V
=4.7 Ω, V
= V
= 10 V, I
= 5 V, I
= 27.5 V, I
= max rating,
= max rating @125 °C
= ±15 V
= 15 V, I
=25 V, f = 1 MHz,
= 0
= 5 V
= 27.5 V, I
Test conditions
Test conditions
Test conditions
GS
, I
D
D
D
= 40 A
D
GS
= 40 A
= 250 µA
D
GS
= 40 A
D
= 40 A,
= 5 V
= 80 A
= 0
STB85NF55L, STP85NF55L
Min.
Min.
Min.
55
-
1
-
-
-
0.0060 0.008
Typ.
165
0.008
4050
Typ.
Typ.
130
860
300
35
70
55
1.6
80
20
45
Max.
Max.
110
Max.
±100
0.01
-
2.5
10
1
Unit
Unit
Unit
ns
ns
ns
ns
nC
nC
nC
pF
pF
pF
µA
µA
nA
S
V
V
Ω