BUK7506-75B,127 NXP Semiconductors, BUK7506-75B,127 Datasheet - Page 13

• Manufacturer Part Number: BUK7506-75B,127
• Description: MOSFET N-CH 75V 75A TO220AB
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of BUK7506-75B,127

• Package / Case: TO-220AB-3
• Mounting Type: Through Hole
• Power - Max: 300W
• Fet Type: MOSFET N-Channel, Metal Oxide
• Gate Charge (qg) @ Vgs: 91nC @ 10V
• Vgs(th) (max) @ Id: 4V @ 1mA
• Current - Continuous Drain (id) @ 25° C: 75A
• Drain To Source Voltage (vdss): 75V
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 5.6 mOhm @ 25A, 10V
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.0056 Ohm @ 10 V
• Drain-source Breakdown Voltage: 75 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 159 A
• Power Dissipation: 300000 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934057109127::BUK7506-75B::BUK7506-75B

Philips Semiconductors
8. Revision history
Table 5:
9397 750 10278
Product data
Rev Date
02
01
20020920
20020405
Revision history
CPCN
-
-
Description
Product data (9397 750 10278)
Modifications:
Product data (9397 750 09494)
•
Description in
N-channel enhancement mode field-effect power transistor in a plastic package using
generation three TrenchMOS™ technology, featuring very low on-state resistance.
to:
N-channel enhancement mode field-effect power transistor in a plastic package using
Philips High-Performance Automotive TrenchMOS™ technology.
Rev. 02 — 20 September 2002
Section 1
changed from:
BUK75/7606-75B
TrenchMOS™ standard level FET
© Koninklijke Philips Electronics N.V. 2002. All rights reserved.
13 of 15