STD50N03L STMicroelectronics, STD50N03L Datasheet - Page 3

• Manufacturer Part Number: STD50N03L
• Description: MOSFET N-CH 30V 40A DPAK
• Manufacturer: STMicroelectronics
• Series: STripFET™r

Specifications of STD50N03L

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 10.5 mOhm @ 20A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 40A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 14nC @ 5V
• Input Capacitance (ciss) @ Vds: 1434pF @ 25V
• Power - Max: 60W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.01 Ohm @ 10 V
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 40 A
• Power Dissipation: 60000 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-7970-2; STD50N03L

STD50N03L - STD50N03L-1
1
Electrical ratings
Table 1.
1. Limited by wire bonding
2. Pulse width limited by safe operating area
3.
Table 2.
Symbol
R
Symbol
R
I
E
Starting T
DM
P
thJ-Case
I
thJ-Amb
V
V
T
D
AS
T
I
TOT
GS
T
DS
stg
D
(1)
J
(2)
(3)
j
j
Absolute maximum ratings
Thermal data
= 25°C, I
Drain-source voltage (V
Gate-source voltage
Drain current (continuous) at T
Drain current (continuous) at T
Drain current (pulsed)
Total dissipation at T
Derating factor
Single pulse avalanche energy
Operating junction temperature
Storage temperature
Thermal resistance junction-case max
Thermal resistance junction-ambient max
Maximum lead temperature for soldering
purpose
D
=20A, V
Parameter
Parameter
DD
=15V
C
= 25°C
GS
= 0)
C
C
=100°C
= 25°C
-55 to 175
Value
±20
160
230
0.4
Value
30
40
36
60
100
275
2.5
Electrical ratings
W/°C
Unit
°C/W
°C/W
mJ
Unit
°C
W
V
V
A
A
A
°C
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