BSP220,115 NXP Semiconductors, BSP220,115 Datasheet - Page 5

• Manufacturer Part Number: BSP220,115
• Description: MOSFET P-CH 200V 225MA SOT223
• Manufacturer: NXP Semiconductors

Specifications of BSP220,115

• Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261
• Mounting Type: Surface Mount
• Power - Max: 1.5W
• Fet Type: MOSFET P-Channel, Metal Oxide
• Vgs(th) (max) @ Id: 2.8V @ 1mA
• Current - Continuous Drain (id) @ 25° C: 225mA
• Drain To Source Voltage (vdss): 200V
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 12 Ohm @ 200mA, 10V
• Minimum Operating Temperature: - 65 C
• Configuration: Single Dual Drain
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 12 Ohm @ 10 V
• Drain-source Breakdown Voltage: 200 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 0.225 A
• Power Dissipation: 1500 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gate Charge (qg) @ Vgs: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 934000490115::BSP220 T/R::BSP220 T/R

Philips Semiconductors
April 1995
handbook, halfpage
handbook,
P-channel enhancement mode vertical
D-MOS transistor
P tot
(W)
1.6
1.2
0.8
0.4
2
0
0
10 V
0 V
Fig.2 Switching time test circuit.
Fig.4 Power derating curve.
50
50
100
V DD = 50 V
I D
150
MBB689
T amb ( C)
MBB693
200
5
handbook, halfpage
handbook, halfpage
Fig.5 Typical output characteristics; T
INPUT
OUTPUT
(A)
I D
0.8
0.6
0.4
0.2
1
0
0
Fig.3 Input and output waveforms.
10 %
5
t on
90 %
10
V GS = 10 V
90 %
15
6 V
5 V
4 V
3 V
Product specification
t off
20
V DS (V)
BSP220
j
MDA706
MBB690
= 25 C.
10 %
25