BSP220,115 NXP Semiconductors, BSP220,115 Datasheet - Page 3

• Manufacturer Part Number: BSP220,115
• Description: MOSFET P-CH 200V 225MA SOT223
• Manufacturer: NXP Semiconductors

Specifications of BSP220,115

• Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261
• Mounting Type: Surface Mount
• Power - Max: 1.5W
• Fet Type: MOSFET P-Channel, Metal Oxide
• Vgs(th) (max) @ Id: 2.8V @ 1mA
• Current - Continuous Drain (id) @ 25° C: 225mA
• Drain To Source Voltage (vdss): 200V
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 12 Ohm @ 200mA, 10V
• Minimum Operating Temperature: - 65 C
• Configuration: Single Dual Drain
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 12 Ohm @ 10 V
• Drain-source Breakdown Voltage: 200 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 0.225 A
• Power Dissipation: 1500 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gate Charge (qg) @ Vgs: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 934000490115::BSP220 T/R::BSP220 T/R

Philips Semiconductors
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 134).
Note
1. Device mounted on an epoxy printed-circuit board 40 x 40 x 1.5 mm; mounting pad for the drain lead minimum 6 cm
THERMAL RESISTANCE
Note
1. Device mounted on an epoxy printed-circuit board 40 x 40 x 1.5 mm; mounting pad for the drain lead minimum 6 cm
April 1995
P
T
T
R
SYMBOL
SYMBOL
V
V
I
I
stg
j
tot
th j-a
P-channel enhancement mode vertical
D-MOS transistor
D
DM
DS
GSO
drain-source voltage
gate-source voltage
drain current
drain current
total power dissipation
storage temperature range
junction temperature
from junction to ambient (note 1)
PARAMETER
PARAMETER
3
open drain
DC value
peak value
up to T
amb
CONDITIONS
= 25 C (note 1)
83.3
MIN.
65
VALUE
Product specification
200
20
225
600
1.5
150
150
BSP220
MAX.
K/W
UNIT
V
V
mA
mA
W
UNIT
C
C
2
2
.
.