STW14NK50Z STMicroelectronics, STW14NK50Z Datasheet - Page 8

• Manufacturer Part Number: STW14NK50Z
• Description: MOSFET N-CH 500V 14A TO-247
• Manufacturer: STMicroelectronics
• Series: SuperMESH™r

Specifications of STW14NK50Z

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 380 mOhm @ 6A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 14A
• Vgs(th) (max) @ Id: 4.5V @ 100µA
• Gate Charge (qg) @ Vgs: 92nC @ 10V
• Input Capacitance (ciss) @ Vds: 2000pF @ 25V
• Power - Max: 150W
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.38 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 12 S
• Drain-source Breakdown Voltage: 500 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 14 A
• Power Dissipation: 150000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-3258-5

Electrical characteristics
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Figure 7.
Figure 9.
Figure 11. Gate charge vs gate-source voltage Figure 12. Capacitance variations
Output characterisics
Transconductance
STP14NK50Z - STP14NK50ZFP - STB14NK50Z - STB14NK50Z-1 -
Figure 8.
Figure 10. Static drain-source on resistance
Transfer characteristics