STW14NK50Z STMicroelectronics, STW14NK50Z Datasheet - Page 5

• Manufacturer Part Number: STW14NK50Z
• Description: MOSFET N-CH 500V 14A TO-247
• Manufacturer: STMicroelectronics
• Series: SuperMESH™r

Specifications of STW14NK50Z

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 380 mOhm @ 6A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 14A
• Vgs(th) (max) @ Id: 4.5V @ 100µA
• Gate Charge (qg) @ Vgs: 92nC @ 10V
• Input Capacitance (ciss) @ Vds: 2000pF @ 25V
• Power - Max: 150W
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.38 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 12 S
• Drain-source Breakdown Voltage: 500 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 14 A
• Power Dissipation: 150000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-3258-5

STP14NK50Z - STP14NK50ZFP - STB14NK50Z - STB14NK50Z-1 - STW14NK50Z Electrical charac-
2
Electrical characteristics
(T
Table 5.
Table 6.
1. Pulsed: pulse duration=300µs, duty cycle 1.5%
2. C
Table 7.
C
V
Symbol
Symbol
Symbol
R
CASE
V
oss eq
(BR)DSS
g
t
C
I
inceases from 0 to 80% V
I
C
C
GS(th)
DS(on)
Q
Q
d(on)
DSS
GSS
fs
Q
oss
oss eq.
t
rss
iss
gs
gd
r
g
(1)
=25°C unless otherwise specified)
(2)
.
is defined as a constant equivalent capacitance giving the same charging time as C
Forward transconductance
Input capacitance
Output capacitance
Reverse transfer
capacitance
Equivalent output
capacitance
Total gate charge
Gate-source charge
Gate-drain charge
Turn-on delay time
Rise time
Drain-source breakdown
voltage
Zero gate voltage drain
current (V
Gate body leakage current
(V
Gate threshold voltage
Static drain-source on
resistance
On/off states
Dynamic
Switching times
DS
= 0)
Parameter
Parameter
GS
Parameter
= 0)
DSS
V
V
V
V
V
I
V
V
=125°C
V
V
V
D
GS
GS
DS
DS
DD
DS
DS
GS
DS
GS
= 1mA, V
V
R
(see Figure 19)
=0, V
=400V, I
= V
= 10V, I
=8V, I
=25V, f=1 MHz, V
=10V
= Max rating,
= Max rating, T
= ±20V
DD
G
Test conditions
=4.7Ω, V
Test conditions
Test conditions
=250 V, I
GS
DS
D
, I
= 6A
D
GS
D
=0V to 400V
D
= 6A
= 100µA
= 12A
= 0
GS
D
=6A,
=10V
C
GS
=0
Min.
500
Min.
3
Min. Typ. Max.
Typ.
3.75
0.34
Typ.
2000
238
150
24
16
12
55
69
12
31
oss
Max.
0.38
when V
Max.
±
4.5
50
10
1
92
DS
Unit
Unit
Unit
µA
µA
nA
nC
nC
nC
pF
pF
pF
pF
ns
ns
V
V
Ω
S
5/19