STP80NF06 STMicroelectronics, STP80NF06 Datasheet - Page 4

• Manufacturer Part Number: STP80NF06
• Description: MOSFET N-CH 60V 80A TO-220
• Manufacturer: STMicroelectronics
• Series: STripFET™r

Specifications of STP80NF06

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 8 mOhm @ 40A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 80A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 150nC @ 10V
• Input Capacitance (ciss) @ Vds: 3850pF @ 25V
• Power - Max: 300W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.008 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 20 S
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 80 A
• Power Dissipation: 300000 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 65 C
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: 497-3201-5

Electrical characteristics
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Electrical characteristics
(T
Table 3.
Table 4.
1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5%
Table 5.
V
Symbol
Symbol
Symbol
R
CASE
V
(BR)DSS
g
t
t
t
C
I
I
DS(on)
C
C
GS(th)
Q
Q
d(on)
d(off)
d(off)
GSS
DSS
fs
Q
t
oss
t
t
t
rss
iss
gs
gd
c
r
f
f
g
(1)
=25°C unless otherwise specified)
Forward transconductance
Input capacitance
Output capacitance
Reverse transfer
capacitance
Total gate charge
Gate-source charge
Gate-drain charge
Turn-on delay time
Rise time
Turn-off-delay time
Fall time
Off-voltage Rise Time
Fall Time
Cross-over Time
Drain-source
Breakdown voltage
Zero gate voltage
Drain current (V
Gate-body leakage
current (V
Gate threshold voltage
Static drain-source on
resistance
On/off states
Dynamic
Switching times
Parameter
Parameter
DS
Parameter
= 0)
GS
= 0)
I
V
V
T
V
V
V
V
V
V
V
V
D
C
GS
GS
DS
DS
DS
DS
DS
GS
DD
GS
= 250 µA, V
=125°C
V
R
(see Figure 13)
V
R
(see Figure 13)
Vclamp =44V, I
R
(see Figure 15)
=Max rating,
= Max rating
= ±20V
= V
= 10V, I
= 2.5V
= 25V, f = 1 MHz,
= 0
= 10V
DD
DD
Test conditions
= 80V, I
G
G
G
Test conditions
= 4.7Ω V
= 4.7Ω, V
= 4.7Ω, V
Test conditions
GS
= 27V, I
= 27V, I
, I
,
D
D
I
D
STP80NF06 - STB80NF06 - STW80NF06
D
= 40A
GS
= 250µA
=18A
= 80A,
GS
D
D
GS
GS
= 0
= 40A
= 40A,
D
= 10V
= 10V
= 10V
=80A
Min.
Min.
60
Min.
2
3850
0.0065 0.008
Typ.
800
250
115
20
24
46
Typ.
Typ.
110
3
25
85
70
25
85
75
Max.
150
±100
Max.
Max.
10
1
4
Unit
Unit
nC
nC
nC
Unit
pF
pF
pF
S
µA
µA
nA
ns
ns
ns
ns
ns
ns
ns
V
V
Ω