STP80NF06 STMicroelectronics, STP80NF06 Datasheet - Page 3

• Manufacturer Part Number: STP80NF06
• Description: MOSFET N-CH 60V 80A TO-220
• Manufacturer: STMicroelectronics
• Series: STripFET™r

Specifications of STP80NF06

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 8 mOhm @ 40A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 80A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 150nC @ 10V
• Input Capacitance (ciss) @ Vds: 3850pF @ 25V
• Power - Max: 300W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.008 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 20 S
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 80 A
• Power Dissipation: 300000 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 65 C
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: 497-3201-5

STP80NF06 - STB80NF06 - STW80NF06
1
Electrical ratings
Table 1.
1. Current limited by wire bonding
2. Pulse width limited by safe operating area
3. Starting T
Table 2.
R
Symbol
E
I
R
thj-case
DM
P
V
I
V
T
AS
thj-a
T
D
I
TOT
T
GS
DS
stg
D
(1)
l
j
(2)
(3)
Thermal resistance junction-case Max
Thermal resistance junction-ambient Max
Maximum lead temperature for soldering
purpose
Drain-source voltage (v
Gate- source voltage
Drain current (continuous) at T
Drain current (continuous) at T
Drain current (pulsed)
Total dissipation at T
Derating factor
Single pulse avalanche energy
Storage temperature
Max. operating junction temperature
j
= 25°C, I
Absolute maximum ratings
Thermal data
D
= 40A, V
DD
Parameter
=40V
C
= 25°C
gs
= 0)
C
C
= 25°C
= 100°C
– 65 to 175
Value
±20
62.5
320
300
870
175
300
60
80
80
0.5
2
Electrical ratings
°C/W
°C/W
W/°C
Unit
°C
mJ
°C
W
V
V
A
A
A
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