STP75NF75 STMicroelectronics, STP75NF75 Datasheet - Page 5

• Manufacturer Part Number: STP75NF75
• Description: MOSFET N-CH 75V 80A TO-220
• Manufacturer: STMicroelectronics
• Series: STripFET™r

Specifications of STP75NF75

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 11 mOhm @ 40A, 10V
• Drain To Source Voltage (vdss): 75V
• Current - Continuous Drain (id) @ 25° C: 80A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 160nC @ 10V
• Input Capacitance (ciss) @ Vds: 3700pF @ 25V
• Power - Max: 300W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.011 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 20 S
• Drain-source Breakdown Voltage: 75 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 80 A
• Power Dissipation: 300000 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-2788-5

STB75NF75 - STP75NF75 - STP75NF75FP
Table 5.
Table 6.
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration=300µs, duty cycle 1.5%
Symbol
Symbol
I
V
SDM
t
t
I
d(on)
d(off)
RRM
I
SD
Q
t
SD
t
t
r
f
rr
rr
(2)
(1)
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Source-drain current
Source-drain current (pulsed)
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Switching times
Source drain diode
Parameter
Parameter
V
R
Figure 15 on page 9
I
I
di/dt = 100A/µs,
V
Figure 17 on page 9
SD
SD
DD
G
DD
=4.7Ω, V
Test conditions
= 37.5V, I
= 80A, V
= 80A,
Test conditions
= 25V, T
GS
GS
D
J
= 45A,
=10V
= 150°C
= 0
Electrical characteristics
Min.
Min
Typ.
Typ.
100
132
660
25
66
30
10
Max.
Max
320
1.5
80
Unit
Unit
nC
ns
ns
ns
ns
ns
A
A
V
A
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