STP75NF75 STMicroelectronics, STP75NF75 Datasheet - Page 3

• Manufacturer Part Number: STP75NF75
• Description: MOSFET N-CH 75V 80A TO-220
• Manufacturer: STMicroelectronics
• Series: STripFET™r

Specifications of STP75NF75

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 11 mOhm @ 40A, 10V
• Drain To Source Voltage (vdss): 75V
• Current - Continuous Drain (id) @ 25° C: 80A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 160nC @ 10V
• Input Capacitance (ciss) @ Vds: 3700pF @ 25V
• Power - Max: 300W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.011 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 20 S
• Drain-source Breakdown Voltage: 75 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 80 A
• Power Dissipation: 300000 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-2788-5

STB75NF75 - STP75NF75 - STP75NF75FP
1
Electrical ratings
Table 1.
1. Current limited by package
2. Pulse width limited by safe operating area
3. I
4.
Table 2.
1. 1.6mm from case for 10sec)
Symbol
dv/dt
E
V
I
P
I
V
I
DM
V
V
Symbol
AS
T
D
D
DGR
T
TOT
SD
Starting T
ISO
R
DS
GS
stg
R
(1)
(1)
J
(2)
thJC
thJA
(4)
T
(3)
≤ 80A, di/dt ≤ 300A/µs, V
l
Drain-source voltage (V
Drain-gate voltage (R
Gate-source voltage
Drain current (continuous) at T
Drain current (continuous) at T
Drain current (pulsed)
Total dissipation at T
Derating factor
Peak diode recovery voltage slope
Single pulse avalanche energy
Insulation withstand voltage (RMS) from all
three leads to external heat sink (t=1s;T
Operating junction temperature
Storage temperature
J
Absolute maximum ratings
Thermal data
= 25
Thermal resistance junction-case max
Thermal resistance junction-ambient max
Maximum lead temperature for soldering
purpose
o
C, I
D
(1)
= 40A, V
DD
Parameter
≤ V
C
Parameter
GS
DD
(BR)DSS
= 25°C
GS
= 37.5V
= 20KΩ)
= 0)
, T
C
C
j
=100°C
≤ T
= 25°C
JMAX
C
=25°C)
D
D
2
PAK /TO-220
2
PAK /TO-220
320
300
2.0
80
70
--
0.5
-55 to 175
Value
Value
± 20
62.5
700
300
75
75
12
TO-220FP
Electrical ratings
TO-220FP
2000
320
0.3
80
70
45
3.33
W/°C
°C/W
°C/W
Unit
V/ns
Unit
mJ
°C
°C
W
V
V
V
A
A
A
V
3/16