IRF7821PBF International Rectifier, IRF7821PBF Datasheet - Page 9

• Manufacturer Part Number: IRF7821PBF
• Description: MOSFET N-CH 30V 13.6A 8-SOIC
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF7821PBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 9.1 mOhm @ 13A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 13.6A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 14nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 1010pF @ 15V
• Power - Max: 2.5W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Current, Drain: 13.6 A
• Gate Charge, Total: 9.3 nC
• Package Type: SO-8
• Polarization: N-Channel
• Power Dissipation: 2.5 W
• Resistance, Drain To Source On: 7 Milliohms
• Temperature, Operating, Maximum: +150 °C
• Temperature, Operating, Minimum: -55 °C
• Time, Turn-off Delay: 9.7 ns
• Time, Turn-on Delay: 6.3 ns
• Transconductance, Forward: 22 S
• Voltage, Breakdown, Drain To Source: 30 V
• Voltage, Forward, Diode: 1 V
• Voltage, Gate To Source: ±20 V
• Configuration: Single Quad Drain Triple Source
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 12.5 mOhms
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 13.6 A
• Maximum Operating Temperature: + 155 C
• Mounting Style: SMD/SMT
• Fall Time: 7.3 ns
• Gate Charge Qg: 9.3 nC
• Minimum Operating Temperature: - 55 C
• Rise Time: 2.7 ns
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

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