IRF7821PBF International Rectifier, IRF7821PBF Datasheet - Page 2

• Manufacturer Part Number: IRF7821PBF
• Description: MOSFET N-CH 30V 13.6A 8-SOIC
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF7821PBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 9.1 mOhm @ 13A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 13.6A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 14nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 1010pF @ 15V
• Power - Max: 2.5W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Current, Drain: 13.6 A
• Gate Charge, Total: 9.3 nC
• Package Type: SO-8
• Polarization: N-Channel
• Power Dissipation: 2.5 W
• Resistance, Drain To Source On: 7 Milliohms
• Temperature, Operating, Maximum: +150 °C
• Temperature, Operating, Minimum: -55 °C
• Time, Turn-off Delay: 9.7 ns
• Time, Turn-on Delay: 6.3 ns
• Transconductance, Forward: 22 S
• Voltage, Breakdown, Drain To Source: 30 V
• Voltage, Forward, Diode: 1 V
• Voltage, Gate To Source: ±20 V
• Configuration: Single Quad Drain Triple Source
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 12.5 mOhms
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 13.6 A
• Maximum Operating Temperature: + 155 C
• Mounting Style: SMD/SMT
• Fall Time: 7.3 ns
• Gate Charge Qg: 9.3 nC
• Minimum Operating Temperature: - 55 C
• Rise Time: 2.7 ns
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

BV
∆ΒV
R
V
∆V
I
I
gfs
Q
Q
Q
t
t
t
t
C
C
C
E
I
I
I
V
t
Q
Static @ T
Avalanche Characteristics
Diode Characteristics
DSS
GSS
d(on)
r
d(off)
f
AR
S
SM
rr
DS(on)
GS(th)
iss
oss
rss
AS
SD
2
g
sw
oss
rr
Q
Q
Q
Q
DSS
GS(th)
gs1
gs2
gd
godr
DSS
/∆T
J
J
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
Switch Charge (Q
Output Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Single Pulse Avalanche Energy
Avalanche Current
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
= 25°C (unless otherwise specified)
Parameter
Ùh
Parameter
Parameter
gs2
™
+ Q
gd
)
h
Min. Typ. Max. Units
Min. Typ. Max. Units
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
1.0
30
22
0.025
1010
- 4.9
–––
–––
–––
–––
–––
–––
–––
360
110
–––
–––
–––
7.0
9.5
9.3
2.5
0.8
2.9
3.1
3.7
6.1
6.3
2.7
9.7
7.3
28
23
Typ.
12.5
-100
–––
–––
–––
––– mV/°C
150
100
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
100
9.1
1.0
3.1
1.0
14
42
35
V/°C
mΩ
nC
nC
nC
µA
nA
pF
ns
ns
V
V
S
A
V
V
Reference to 25°C, I
V
V
V
V
V
V
V
V
V
V
I
See Fig. 16
V
V
I
Clamped Inductive Load
V
V
ƒ = 1.0MHz
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
T
di/dt = 100A/µs
D
D
J
J
GS
GS
GS
DS
DS
DS
GS
GS
DS
DS
GS
DS
DD
GS
DS
= 10A
= 10A
= 25°C, I
= 25°C, I
= 0V, I
= 10V, I
= 4.5V, I
= V
= 24V, V
= 24V, V
= 20V
= -20V
= 15V, I
= 15V
= 4.5V
= 10V, V
= 15V, V
= 0V
= 15V
GS
Max.
, I
44
10
D
Conditions
Conditions
D
S
F
D
D
= 250µA
D
GS
GS
GS
GS
= 250µA
= 10A, V
= 10A, V
= 10A
= 13A
= 10A
= 0V
= 0V, T
= 0V
e
= 4.5V
www.irf.com
D
e
e
= 1mA
DD
GS
J
e
= 125°C
= 20V
= 0V
Units
mJ
A
e