IRF7821PBF International Rectifier, IRF7821PBF Datasheet

MOSFET N-CH 30V 13.6A 8-SOIC

IRF7821PBF

Manufacturer Part Number
IRF7821PBF
Description
MOSFET N-CH 30V 13.6A 8-SOIC
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheets

Specifications of IRF7821PBF

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
9.1 mOhm @ 13A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
13.6A
Vgs(th) (max) @ Id
1V @ 250µA
Gate Charge (qg) @ Vgs
14nC @ 4.5V
Input Capacitance (ciss) @ Vds
1010pF @ 15V
Power - Max
2.5W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Current, Drain
13.6 A
Gate Charge, Total
9.3 nC
Package Type
SO-8
Polarization
N-Channel
Power Dissipation
2.5 W
Resistance, Drain To Source On
7 Milliohms
Temperature, Operating, Maximum
+150 °C
Temperature, Operating, Minimum
-55 °C
Time, Turn-off Delay
9.7 ns
Time, Turn-on Delay
6.3 ns
Transconductance, Forward
22 S
Voltage, Breakdown, Drain To Source
30 V
Voltage, Forward, Diode
1 V
Voltage, Gate To Source
±20 V
Configuration
Single Quad Drain Triple Source
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
12.5 mOhms
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
13.6 A
Maximum Operating Temperature
+ 155 C
Mounting Style
SMD/SMT
Fall Time
7.3 ns
Gate Charge Qg
9.3 nC
Minimum Operating Temperature
- 55 C
Rise Time
2.7 ns
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRF7821PBF
Manufacturer:
IR
Quantity:
20 000
Applications
l
Benefits
l
l
l
l
V
V
I
I
I
P
P
T
T
R
R
Notes  through
Absolute Maximum Ratings
Thermal Resistance
D
D
DM
J
STG
DS
GS
D
D
θJL
θJA
and Current
@ T
@ T
High Frequency Point-of-Load
Synchronous Buck Converter for
Applications in Networking &
Computing Systems.
Lead-Free
Very Low R
Low Gate Charge
Fully Characterized Avalanche Voltage
@T
@T
A
A
A
A
= 25°C
= 70°C
= 25°C
= 70°C
DS(on)
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current
Power Dissipation
Power Dissipation
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Junction-to-Drain Lead
Junction-to-Ambient
at 4.5V V
are on page 10
Parameter
Parameter
f
f
GS
fg
g
GS
GS
@ 10V
@ 10V
G
S
S
S
V
30V
DSS
1
2
3
4
Top View
Typ.
–––
–––
9.1mW@V
-55 to + 155
HEXFET Power MOSFET
8
7
6
5
IRF7821PbF
R
Max.
13.6
0.02
± 20
100
2.5
1.6
30
11
DS(on)
D
D
D
D
A
A
GS
Max.
max
20
50
= 10V
SO-8
Q
9.3nC
Units
Units
W/°C
°C/W
g
°C
W
(typ.)
V
A
1

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IRF7821PBF Summary of contents

Page 1

... Junction-to-Drain Lead R θJL Junction-to-Ambient R θJA Notes  through are on page 10 … V DSS 30V Top View @ 10V GS @ 10V Typ. g ––– fg ––– IRF7821PbF HEXFET Power MOSFET R max Q (typ.) DS(on) g 9.1mW@V = 10V 9.3nC SO-8 Max. Units 30 V ± 100 2 ...

Page 2

Static @ T = 25°C (unless otherwise specified) J Parameter BV Drain-to-Source Breakdown Voltage DSS ∆ΒV /∆T Breakdown Voltage Temp. Coefficient DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) ∆V Gate Threshold Voltage Coefficient GS(th) I ...

Page 3

SO-8 Package Details Dimensions are shown in milimeters (inches & " YÃi !$Ãb dà IPU@T) ÃÃ9DH@ITDPIDIBÃÉÃUPG@S6I8DIBÃQ@SÃ6TH@Ã` #$H ((# !ÃÃ8PIUSPGGDIBÃ9DH@ITDPI)ÃHDGGDH@U@S "ÃÃ9DH@ITDPITÃ6S@ÃTCPXIÃDIÃHDGGDH@U@STÃbDI8C@Td #ÃÃPVUGDI@Ã8PI PSHTÃUPÃE@9@8ÃPVUGDI@ÃHT !66 ...

Page 4

SO-8 Tape and Reel Dimensions are shown in milimeters (inches) 8.1 ( .318 ) 7.9 ( .312 ) NOTES: 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. NOTES : ...

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