SPW35N60C3 Infineon Technologies, SPW35N60C3 Datasheet - Page 3

• Manufacturer Part Number: SPW35N60C3
• Description: MOSFET N-CH 650V 34.6A TO-247
• Manufacturer: Infineon Technologies
• Series: CoolMOS™r

Specifications of SPW35N60C3

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 100 mOhm @ 21.9A, 10V
• Drain To Source Voltage (vdss): 650V
• Current - Continuous Drain (id) @ 25° C: 34.6A
• Vgs(th) (max) @ Id: 3.9V @ 1.9mA
• Gate Charge (qg) @ Vgs: 200nC @ 10V
• Input Capacitance (ciss) @ Vds: 4500pF @ 25V
• Power - Max: 313W
• Mounting Type: Through Hole
• Package / Case: TO-247-3 (Straight Leads)
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 34.6A
• Drain Source Voltage Vds: 650V
• On Resistance Rds(on): 100mohm
• Rds(on) Test Voltage Vgs: 10V
• Voltage Vgs Max: 20V
• Operating Temperature: RoHS Compliant
• Threshold Voltage Vgs Typ: 3V
• Rohs Compliant: Yes
• Configuration: Single
• Resistance Drain-source Rds (on): 0.1 Ohms
• Drain-source Breakdown Voltage: 650 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 34.6 A
• Power Dissipation: 313 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SP000014970; SPW35N60C3; SPW35N60C3IN; SPW35N60C3X; SPW35N60C3XK

Rev. 2.4
1)
2)
3)
4)
6)
Parameter
Dynamic characteristics
Input capacitance
Output capacitance
Reverse transfer capacitance
Effective output capacitance, energy
related
Effective output capacitance, time
related
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Gate Charge Characteristics
Gate to source charge
Gate to drain charge
Gate charge total
Gate plateau voltage
Identical low-side and high-side switch.
Pulse width limited by maximum temperature T
Repetitive avalanche causes additional power losses that can be calculated as P
C
C
I
SD
o(er)
o(tr)
<=I
is a fixed capacitance that gives the same charging time as C
3)
4)
is a fixed capacitance that gives the same stored energy as C
D
, di/dt<=200A/us, V
DClink
=400V, V
Symbol Conditions
C
C
C
C
C
t
t
t
t
Q
Q
Q
V
d(on)
r
d(off)
f
plateau
peak
iss
oss
rss
o(er)
o(tr)
gs
gd
g
<V
j,max
BR, DSS
V
f =1 MHz
V
to 480 V
V
V
R
V
I
V
only
Page 3
D
GS
GS
DD
GS
DD
GS
G
=34.6 A,
=3.3 Ω
=0 V, V
=0 V, V
=480 V,
=10 V, I
=480 V,
=0 to 10 V
, T
j
<T
j,max
DS
DS
D
=34.6 A,
=25 V,
=0 V
oss
oss
.
while V
while V
DS
DS
min.
is rising from 0 to 80% V
AV
is rising from 0 to 80% V
-
-
-
-
-
-
-
-
-
-
-
-
-
=E
AR
*f.
Values
4500
1500
typ.
100
180
324
150
5.3
10
70
10
18
70
5
SPW35N60C3
max.
200
-
-
-
-
-
-
-
-
-
-
-
-
2005-09-21
DSS.
DSS.
Unit
pF
ns
nC
V