SPW35N60C3 Infineon Technologies, SPW35N60C3 Datasheet - Page 2

• Manufacturer Part Number: SPW35N60C3
• Description: MOSFET N-CH 650V 34.6A TO-247
• Manufacturer: Infineon Technologies
• Series: CoolMOS™r

Specifications of SPW35N60C3

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 100 mOhm @ 21.9A, 10V
• Drain To Source Voltage (vdss): 650V
• Current - Continuous Drain (id) @ 25° C: 34.6A
• Vgs(th) (max) @ Id: 3.9V @ 1.9mA
• Gate Charge (qg) @ Vgs: 200nC @ 10V
• Input Capacitance (ciss) @ Vds: 4500pF @ 25V
• Power - Max: 313W
• Mounting Type: Through Hole
• Package / Case: TO-247-3 (Straight Leads)
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 34.6A
• Drain Source Voltage Vds: 650V
• On Resistance Rds(on): 100mohm
• Rds(on) Test Voltage Vgs: 10V
• Voltage Vgs Max: 20V
• Operating Temperature: RoHS Compliant
• Threshold Voltage Vgs Typ: 3V
• Rohs Compliant: Yes
• Configuration: Single
• Resistance Drain-source Rds (on): 0.1 Ohms
• Drain-source Breakdown Voltage: 650 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 34.6 A
• Power Dissipation: 313 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SP000014970; SPW35N60C3; SPW35N60C3IN; SPW35N60C3X; SPW35N60C3XK

Rev. 2.4
Parameter
Thermal characteristics
Thermal resistance, junction - case
Thermal resistance, junction -
ambient
Soldering temperature, wavesoldering T
Electrical characteristics, at T
Static characteristics
Drain-source breakdown voltage
Avalanche breakdown voltage
Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
Gate resistance
Transconductance
j
=25 °C, unless otherwise specified
Symbol Conditions
R
R
V
V
V
I
I
R
R
g
DSS
GSS
fs
sold
(BR)DSS
(BR)DS
GS(th)
thJC
thJA
DS(on)
G
leaded
1.6 mm (0.063 in.)
from case for 10 s
V
V
V
V
T
V
T
V
V
T
V
T
f =1 MHz, open drain
|V
I
Page 2
D
j
j
j
j
GS
GS
DS
DS
DS
GS
GS
GS
=21.9 A
=25 °C
=150 °C
=25 °C
=150 °C
DS
=V
=600 V, V
=600 V, V
=0 V, I
=0 V, I
=20 V, V
=10 V, I
=10 V, I
|>2|I
GS
D
, I
|R
D
D
D
=250 µA
=34.6 A
D
D
=1.9 mA
DS(on)max
DS
=21.9 A,
=21.9 A,
GS
GS
=0 V
=0 V,
=0 V,
,
min.
600
2.1
-
-
-
-
-
-
-
-
-
-
-
Values
0.081
typ.
700
0.1
0.2
0.6
36
3
-
-
-
-
-
-
SPW35N60C3
max.
260
100
100
0.4
3.9
0.1
62
1
-
-
-
-
-
2005-09-21
Unit
K/W
°C
V
µA
nA
Ω
S