SPW17N80C3 Infineon Technologies, SPW17N80C3 Datasheet - Page 7

• Manufacturer Part Number: SPW17N80C3
• Description: MOSFET N-CH 800V 17A TO-247
• Manufacturer: Infineon Technologies
• Series: CoolMOS™r

Specifications of SPW17N80C3

• Package / Case: TO-247-3 (Straight Leads)
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 290 mOhm @ 11A, 10V
• Drain To Source Voltage (vdss): 800V
• Current - Continuous Drain (id) @ 25° C: 17A
• Vgs(th) (max) @ Id: 3.9V @ 1mA
• Gate Charge (qg) @ Vgs: 177nC @ 10V
• Input Capacitance (ciss) @ Vds: 2320pF @ 25V
• Power - Max: 208W
• Mounting Type: Through Hole
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.29 Ohm @ 10 V
• Drain-source Breakdown Voltage: 800 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 17 A
• Power Dissipation: 208000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Fall Time: 6 ns
• Rise Time: 15 ns
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SP000013369; SPW17N80C3IN; SPW17N80C3X; SPW17N80C3XK; SPW17N80C3XTIN; SPW17N80C3XTIN

9 Typ. gate charge
V
parameter: I
11 Avalanche SOA
I
par.: T
Rev. 2.1
AR
GS
= f (t
A
= f (Q
V
16
12
10
18
14
12
10
8
6
4
2
0
8
6
4
2
0
10
j
0
≤ 150 °C
SPW17N80C3
0.2 V
0.8 V
AR
-3
20
Gate
)
10
DS max
DS max
D
-2
= 17 A pulsed
40
)
10
-1
T
j (START)
60
10
=125°C
0
80
10
100
1
T
j (START)
10
120
2
=25°C
nC
Q
t
µs
AR
Gate
160
10
Page 7
4
10 Forward characteristics of body diode
I
parameter: T j , t
12 Avalanche energy
E
par.: I
F
AS
= f (V
mJ
10
10
10
10
700
600
550
500
450
400
350
300
250
200
150
100
= f ( T
A
50
-1
D
0
2
1
0
25
0
SPW17N80C3
= 3.4 A, V
SD
j
)
)
0.4
50
0.8
p
= 10 µs
DD
1.2
75
T
T
T
T
= 50 V
j
j
j
j
= 25 °C typ
= 150 °C typ
= 25 °C (98%)
= 150 °C (98%)
1.6
SPW17N80C3
100
2
2005-02-10
2.4
°C
V
V
T
SD
j
150
3