SPW17N80C3 Infineon Technologies, SPW17N80C3 Datasheet - Page 3

• Manufacturer Part Number: SPW17N80C3
• Description: MOSFET N-CH 800V 17A TO-247
• Manufacturer: Infineon Technologies
• Series: CoolMOS™r

Specifications of SPW17N80C3

• Package / Case: TO-247-3 (Straight Leads)
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 290 mOhm @ 11A, 10V
• Drain To Source Voltage (vdss): 800V
• Current - Continuous Drain (id) @ 25° C: 17A
• Vgs(th) (max) @ Id: 3.9V @ 1mA
• Gate Charge (qg) @ Vgs: 177nC @ 10V
• Input Capacitance (ciss) @ Vds: 2320pF @ 25V
• Power - Max: 208W
• Mounting Type: Through Hole
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.29 Ohm @ 10 V
• Drain-source Breakdown Voltage: 800 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 17 A
• Power Dissipation: 208000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Fall Time: 6 ns
• Rise Time: 15 ns
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SP000013369; SPW17N80C3IN; SPW17N80C3X; SPW17N80C3XK; SPW17N80C3XTIN; SPW17N80C3XTIN

Electrical Characteristics , at T
Parameter
Transconductance
Input capacitance
Output capacitance
Reverse transfer capacitance
Effective output capacitance,
energy related
Effective output capacitance,
time related
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Gate Charge Characteristics
Gate to source charge
Gate to drain charge
Gate charge total
Gate plateau voltage
1 Repetitve avalanche causes additional power losses that can be calculated as P
2 C
3 C
Rev. 2.1
o(er)
o(tr)
is a fixed capacitance that gives the same charging time as C
is a fixed capacitance that gives the same stored energy as C
2)
3)
Symbol
g
C
C
C
C
C
t
t
t
t
Q
Q
Q
V
d(on)
r
d(off)
f
j
fs
(plateau)
iss
oss
rss
o(er)
o(tr)
gs
gd
g
= 25 °C, unless otherwise specified
V
V
V
V
V
I
V
f=1MHz
V
V
V
I
T
D
D
Page 3
j
DS
GS
GS
DS
DD
DD
DD
GS
DD
=125°C
=11A
=17A, R
≥ 2* I
=0V to 480V
=0V, V
=0V,
=400V, V
=640V, I
=640V, I
=0 to 10V
=640V, I
Conditions
D
* R
G
DS
=4.7 Ω ,
DS(on)max
D
D
D
GS
=25V,
=17A
=17A,
=17A
=0/10V,
oss
oss
while V
while V
,
min.
DS
DS
-
-
-
-
-
-
-
-
-
-
-
-
-
-
AV
is rising from 0 to 80% V
is rising from 0 to 80% V
=E
Values
AR
2320
1250
124
typ.
*f.
12
46
91
15
60
59
25
15
72
6
6
SPW17N80C3
2005-02-10
max.
177
82
9
-
-
-
-
-
-
-
-
-
-
-
nC
V
Unit
S
pF
pF
ns
DSS
DSS
.
.