IRF6618 International Rectifier, IRF6618 Datasheet - Page 9

• Manufacturer Part Number: IRF6618
• Description: MOSFET N-CH 30V 30A DIRECTFET
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF6618

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 2.2 mOhm @ 30A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 30A
• Vgs(th) (max) @ Id: 2.35V @ 250µA
• Gate Charge (qg) @ Vgs: 65nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 5640pF @ 15V
• Power - Max: 2.8W
• Mounting Type: Surface Mount
• Package / Case: DirectFET™ Isometric MT
• Configuration: Single Quad Drain Dual Source
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 2.2 m Ohms
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 29 A
• Power Dissipation: 2.8 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Fall Time: 8.1 ns
• Minimum Operating Temperature: - 40 C
• Rise Time: 71 ns
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: IRF6618TR

www.irf.com
DirectFET™ Tape & Reel Dimension
(Showing component orientation).
NOTE: Controlling dimensions in mm
Std reel quantity is 4800 parts. (ordered as IRF6618). For 1000 parts on 7" reel,
order IRF6618TR1
CODE
A
B
C
D
E
F
G
H
STANDARD OPTION (QTY 4800)
100.0
330.0
MIN
20.2
12.8
12.4
11.9
1.5
N.C
METRIC
MAX
N.C
N.C
13.2
N.C
N.C
18.4
14.4
15.4
12.992
0.795
0.504
0.059
3.937
0.488
0.469
MIN
N.C
IMPERIAL
REEL DIMENSIONS
0.520
0.724
0.567
0.606
MAX
N.C
N.C
N.C
N.C
177.77
19.06
13.5
1.5
11.9
11.9
58.72
N.C
MIN
TR1 OPTION (QTY 1000)
METRIC
12.8
13.50
12.01
12.01
N.C
N.C
N.C
N.C
MAX
6.9
0.75
0.53
0.059
2.31
N.C
0.47
0.47
MIN
IMPERIAL
N.C
N.C
N.C
N.C
N.C
N.C
0.50
0.53
MAX
9