IRF6618 International Rectifier, IRF6618 Datasheet - Page 2

• Manufacturer Part Number: IRF6618
• Description: MOSFET N-CH 30V 30A DIRECTFET
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF6618

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 2.2 mOhm @ 30A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 30A
• Vgs(th) (max) @ Id: 2.35V @ 250µA
• Gate Charge (qg) @ Vgs: 65nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 5640pF @ 15V
• Power - Max: 2.8W
• Mounting Type: Surface Mount
• Package / Case: DirectFET™ Isometric MT
• Configuration: Single Quad Drain Dual Source
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 2.2 m Ohms
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 29 A
• Power Dissipation: 2.8 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Fall Time: 8.1 ns
• Minimum Operating Temperature: - 40 C
• Rise Time: 71 ns
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: IRF6618TR

BV
∆ΒV
R
V
∆V
I
I
gfs
Q
Q
Q
R
t
t
t
t
C
C
C
I
I
V
t
Q
Static @ T
Diode Characteristics
DSS
GSS
d(on)
r
d(off)
f
S
SM
rr
GS(th)
SD
DS(on)
G
iss
oss
rss
g
sw
oss
rr
Q
Q
Q
Q
2
GS(th)
DSS
gs1
gs2
gd
godr
DSS
/∆T
/∆T
J
J
J
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
Switch Charge (Q
Output Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
= 25°C (unless otherwise specified)
Parameter
Parameter
™
gs2
+ Q
gd
)
Min. Typ. Max. Units
Min. Typ. Max. Units
1.35
–––
–––
–––
–––
–––
–––
–––
–––
–––
100
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
30
5640
1260
1.64
0.78
-5.7
–––
–––
–––
–––
–––
–––
–––
–––
570
–––
–––
1.7
4.0
1.0
8.1
23
43
12
15
12
19
28
21
71
27
43
46
-100
2.35
–––
––– mV/°C
––– mV/°C
150
100
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
240
2.2
3.4
5.0
1.0
2.2
1.2
65
23
89
65
69
mΩ
µA
nA
nC
nC
nC
ns
pF
ns
Ω
V
V
S
A
V
See Fig. 16
V
Reference to 25°C, I
V
V
V
V
V
V
V
V
V
V
V
I
V
V
I
Clamped Inductive Load
V
V
ƒ = 1.0MHz
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
T
di/dt = 100A/µs
D
D
J
J
GS
GS
GS
DS
DS
DS
DS
GS
GS
DS
DS
GS
DS
DD
GS
DS
= 24A
= 24A
= 25°C, I
= 25°C, I
= V
= 30V, V
= 24V, V
= 24V, V
= 15V, I
= 15V
= 15V, V
= 15V
= 0V, I
= 10V, I
= 4.5V, I
= 20V
= -20V
= 4.5V
= 15V, V
= 0V
GS
, I
D
Conditions
Conditions
D
S
F
D
D
= 250µA
D
GS
GS
GS
GS
GS
= 250µA
= 24A
= 24A, V
= 24A
= 30A
= 24A
= 0V
= 0V
= 0V, T
= 0V
e
= 4.5V
D
e
www.irf.com
e
G
= 1mA
GS
J
= 150°C
e
= 0V
D
S
e