IRF6618 International Rectifier, IRF6618 Datasheet - Page 4

• Manufacturer Part Number: IRF6618
• Description: MOSFET N-CH 30V 30A DIRECTFET
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF6618

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 2.2 mOhm @ 30A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 30A
• Vgs(th) (max) @ Id: 2.35V @ 250µA
• Gate Charge (qg) @ Vgs: 65nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 5640pF @ 15V
• Power - Max: 2.8W
• Mounting Type: Surface Mount
• Package / Case: DirectFET™ Isometric MT
• Configuration: Single Quad Drain Dual Source
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 2.2 m Ohms
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 29 A
• Power Dissipation: 2.8 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Fall Time: 8.1 ns
• Minimum Operating Temperature: - 40 C
• Rise Time: 71 ns
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: IRF6618TR

1000.00
Fig 7. Typical Source-Drain Diode Forward Voltage
4
100.00
10.00
1.00
0.10
180
160
140
120
100
80
60
40
20
0
0.0001
0.2
0.001
25
Fig 9. Maximum Drain Current vs.
0.01
100
0.1
10
1
1E-006
V SD , Source-to-Drain Voltage (V)
0.4
50
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
T C , Case Temperature (°C)
Case Temperature
D = 0.50
T J = 150°C
0.02
0.05
0.01
0.10
0.20
1E-005
0.6
75
SINGLE PULSE
( THERMAL RESPONSE )
T J = 25°C
100
0.8
0.0001
V GS = 0V
125
1.0
t 1 , Rectangular Pulse Duration (sec)
150
1.2
0.001
τ
J
τ
J
τ
1
Ci= τi/Ri
τ
1
Ci= τi/Ri
0.01
R
1
R
1
1000
100
Fig 10. Threshold Voltage vs. Temperature
2.5
2.0
1.5
1.0
0.5
0.0
10
τ
2
1
R
τ
2
Fig 8. Maximum Safe Operating Area
2
R
-75
0
2
0.1
T C = 25°C
Tj = 150°C
Single Pulse
R
-50
τ
3
3
R
τ
3
V DS , Drain-to-Source Voltage (V)
3
-25
τ
1
R
4
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthja + Tc
τ
T J , Temperature ( °C )
4
R
OPERATION IN THIS AREA
LIMITED BY R DS (on)
4
4
I D = 250µA
τ
0
A
1
τ
A
Ri (°C/W) τi (sec)
25
0.6784
17.299
17.566
9.4701
10
50
100µsec
10msec
10
1msec
75
106
8.94
0.00086
0.57756
100
100
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125
100
1000
150