STB55NF06LT4 STMicroelectronics, STB55NF06LT4 Datasheet - Page 8

• Manufacturer Part Number: STB55NF06LT4
• Description: MOSFET N-CH 60V 55A D2PAK
• Manufacturer: STMicroelectronics
• Series: STripFET™r

Specifications of STB55NF06LT4

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 18 mOhm @ 27.5A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 55A
• Vgs(th) (max) @ Id: 4.7V @ 250µA
• Gate Charge (qg) @ Vgs: 37nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 1700pF @ 25V
• Power - Max: 95W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.018 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 30 S
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: +/- 16 V
• Continuous Drain Current: 55 A
• Power Dissipation: 95000 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Continuous Drain Current Id: 55A
• Drain Source Voltage Vds: 30V
• On Resistance Rds(on): 14mohm
• Rds(on) Test Voltage Vgs: 16V
• Threshold Voltage Vgs Typ: 1.7V
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-7462-2; STB55NF06LT4

Test circuit
3
8/15
Figure 12. Switching times test circuit for
Figure 14. Test circuit for inductive load
Figure 16. Unclamped inductive waveform
resistive load
switching and diode recovery times
Test circuit
Figure 13. Gate charge test circuit
Figure 15. Unclamped Inductive load test
Figure 17. Switching time waveform
STB55NF06L - STB55NF06L-1 - STP55NF06L
circuit