STB55NF06LT4 STMicroelectronics, STB55NF06LT4 Datasheet - Page 4

• Manufacturer Part Number: STB55NF06LT4
• Description: MOSFET N-CH 60V 55A D2PAK
• Manufacturer: STMicroelectronics
• Series: STripFET™r

Specifications of STB55NF06LT4

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 18 mOhm @ 27.5A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 55A
• Vgs(th) (max) @ Id: 4.7V @ 250µA
• Gate Charge (qg) @ Vgs: 37nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 1700pF @ 25V
• Power - Max: 95W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.018 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 30 S
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: +/- 16 V
• Continuous Drain Current: 55 A
• Power Dissipation: 95000 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Continuous Drain Current Id: 55A
• Drain Source Voltage Vds: 30V
• On Resistance Rds(on): 14mohm
• Rds(on) Test Voltage Vgs: 16V
• Threshold Voltage Vgs Typ: 1.7V
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-7462-2; STB55NF06LT4

Electrical characteristics
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Electrical characteristics
(T
Table 3.
Table 4.
1. Pulsed: pulse duration=300µs, duty cycle 1.5%
V
Symbol
Symbol
R
CASE
V
(BR)DSS
g
C
I
I
DS(on)
C
C
GS(th)
Q
Q
DSS
GSS
fs
Q
oss
rss
iss
gs
gd
g
(1)
=25°C unless otherwise specified)
Forward transconductance
Input capacitance
Output capacitance
Reverse transfer
capacitance
Total gate charge
Gate-source charge
Gate-drain charge
Drain-source breakdown
voltage
Zero gate voltage drain
current (V
Gate body leakage current
(V
Gate threshold voltage
Static drain-source on
resistance
On/off states
Dynamic
DS
= 0)
Parameter
Parameter
GS
= 0)
V
V
V
V
V
I
V
V
V
V
V
V
D
GS
GS
DS
DS
DD
DS
DS
GS
DS
GS
GS
= 250µA, V
=0
=48V, I
= V
= 5V, I
= 10V, I
=15V, I
=25V, f=1 MHz,
=4.5V
= Max rating,
= Max rating @125°C
= ±16V
Test conditions
Test conditions
STB55NF06L - STB55NF06L-1 - STP55NF06L
GS
, I
D
D
D
D
= 27.5A
D
= 55A
= 27.5A
= 27.5A
GS
= 250µA
= 0
Min.
Min.
60
1
0.016
0.014
1700
Typ.
Typ.
300
105
1.7
30
27
10
7
0.020
0.018
Max.
Max.
±
100
37
10
1
Unit
Unit
µA
µA
nA
nC
nC
nC
pF
pF
pF
V
V
Ω
Ω
S