STB11NK40ZT4 STMicroelectronics, STB11NK40ZT4 Datasheet - Page 9

• Manufacturer Part Number: STB11NK40ZT4
• Description: MOSFET N-CH 400V 9A D2PAK
• Manufacturer: STMicroelectronics
• Series: SuperMESH™r

Specifications of STB11NK40ZT4

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 550 mOhm @ 4.5A, 10V
• Drain To Source Voltage (vdss): 400V
• Current - Continuous Drain (id) @ 25° C: 9A
• Vgs(th) (max) @ Id: 4.5V @ 100µA
• Gate Charge (qg) @ Vgs: 32nC @ 10V
• Input Capacitance (ciss) @ Vds: 930pF @ 25V
• Power - Max: 110W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 4.5A
• Drain Source Voltage Vds: 400V
• On Resistance Rds(on): 490mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 3.75V
• Rohs Compliant: Yes
• Configuration: Single
• Resistance Drain-source Rds (on): 0.55 Ohms
• Forward Transconductance Gfs (max / Min): 5.8 S
• Drain-source Breakdown Voltage: 400 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 9 A
• Power Dissipation: 110 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-7930-2; STB11NK40ZT4

STB11NK40Z, STP11NK40ZFP, STP11NK40Z
Figure 14. Source-drain diode forward
Figure 16. Maximum avalanche energy vs
characteristics
temperature
Doc ID 8936 Rev 7
Figure 15. Normalized B
Electrical characteristics
VDSS
vs temperature
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