STB11NK40ZT4 STMicroelectronics, STB11NK40ZT4 Datasheet - Page 5

• Manufacturer Part Number: STB11NK40ZT4
• Description: MOSFET N-CH 400V 9A D2PAK
• Manufacturer: STMicroelectronics
• Series: SuperMESH™r

Specifications of STB11NK40ZT4

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 550 mOhm @ 4.5A, 10V
• Drain To Source Voltage (vdss): 400V
• Current - Continuous Drain (id) @ 25° C: 9A
• Vgs(th) (max) @ Id: 4.5V @ 100µA
• Gate Charge (qg) @ Vgs: 32nC @ 10V
• Input Capacitance (ciss) @ Vds: 930pF @ 25V
• Power - Max: 110W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 4.5A
• Drain Source Voltage Vds: 400V
• On Resistance Rds(on): 490mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 3.75V
• Rohs Compliant: Yes
• Configuration: Single
• Resistance Drain-source Rds (on): 0.55 Ohms
• Forward Transconductance Gfs (max / Min): 5.8 S
• Drain-source Breakdown Voltage: 400 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 9 A
• Power Dissipation: 110 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-7930-2; STB11NK40ZT4

STB11NK40Z, STP11NK40ZFP, STP11NK40Z
2
Electrical characteristics
(T
Table 5.
Table 6.
1. Pulsed: pulse duration=300µs, duty cycle 1.5%
2. C
C
V
Symbol
Symbol
R
CASE
V
oss eq
(BR)DSS
g
C
I
I
inceases from 0 to 80% V
DS(on)
C
C
GS(th)
Q
Q
GSS
DSS
fs
Q
oss
oss eq.
rss
iss
gs
gd
g
(1)
=25°C unless otherwise specified)
(2)
.
is defined as a constant equivalent capacitance giving the same charging time as C
Forward transconductance
Input capacitance
Output capacitance
Reverse transfer
capacitance
Equivalent output
capacitance
Total gate charge
Gate-source charge
Gate-drain charge
Drain-source breakdown
voltage
Zero gate voltage drain
current (V
Gate body leakage current
(V
Gate threshold voltage
Static drain-source on
resistance
On/off states
Dynamic
DS
= 0)
Parameter
Parameter
GS
= 0)
DSS
Doc ID 8936 Rev 7
I
V
V
V
V
V
V
V
V
V
V
(see Figure 18)
D
GS
GS
GS
GS
DS
DS
DS
DS
DS
DD
= 1mA, V
= V
= 10V, I
=0, V
=320V, I
= Max rating,
= Max rating @125°C
= ± 20V, V
=15V, I
=25V, f=1 MHz, V
=10V
Test conditions
Test conditions
GS
DS
, I
D
D
GS
D
=0V to 320V
D
= 4.5A
= 4.5A
= 100µA
= 9A
= 0
DS
= 0
GS
=0
Min.
Min.
Electrical characteristics
400
3
-
-
-
-
Typ.
18.5
Typ.
3.75
0.49
930
140
5.8
30
78
32
6
oss
Max.
Max.
0.55
when V
±
4.5
50
10
1
-
-
-
-
DS
Unit
Unit
nC
nC
nC
µA
µA
µA
pF
pF
pF
pF
S
V
V
Ω
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